Datasheets
JANTX2N6800 by:

Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN

Part Details for JANTX2N6800 by International Rectifier

Results Overview of JANTX2N6800 by International Rectifier

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Applications Consumer Electronics Audio and Video Systems

JANTX2N6800 Information

JANTX2N6800 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for JANTX2N6800

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JANTX2N6800 Part Data Attributes

JANTX2N6800 International Rectifier
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JANTX2N6800 International Rectifier Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Package Description HERMETIC SEALED, TO-205AF, 3 PIN
Reach Compliance Code unknown
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 0.51 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205AF
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 25 W
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 14 A
Qualification Status Not Qualified
Reference Standard MIL-19500/557
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 90 ns
Turn-on Time-Max (ton) 65 ns

JANTX2N6800 Related Parts

JANTX2N6800 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the JANTX2N6800 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • The JANTX2N6800 is designed to meet the requirements of MIL-PRF-19500, which includes radiation hardness testing. However, it's essential to consult with International Rectifier or a qualified radiation testing facility to ensure the specific radiation requirements for your application are met.

  • Store the JANTX2N6800 in a dry, cool place, away from direct sunlight and moisture. Avoid touching the leads or body of the device, as the oils from human skin can cause damage. Use anti-static wrist straps, mats, or packaging materials to prevent electrostatic discharge (ESD) damage.

  • Yes, the JANTX2N6800 can be used in non-military applications, but it's essential to ensure that the device meets the specific requirements of your application. Keep in mind that the JANTX2N6800 is designed to meet military standards, which may exceed the requirements of commercial applications. Consult with International Rectifier or a qualified engineer to determine the suitability of the device for your specific use case.

  • Consult the International Rectifier reliability report and failure rate data, which are typically available upon request. You can also use industry-standard reliability prediction models, such as MIL-HDBK-217 or Telcordia, to estimate the failure rate of the JANTX2N6800 in your specific application.

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