Part Details for JANTX2N6800 by Harris Semiconductor
Results Overview of JANTX2N6800 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
JANTX2N6800 Information
JANTX2N6800 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTX2N6800
JANTX2N6800 CAD Models
JANTX2N6800 Part Data Attributes
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JANTX2N6800
Harris Semiconductor
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Datasheet
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JANTX2N6800
Harris Semiconductor
Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | RADIATION HARDENED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 80 pF | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 25 W | |
| Pulsed Drain Current-Max (IDM) | 14 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 65 ns |
Alternate Parts for JANTX2N6800
This table gives cross-reference parts and alternative options found for JANTX2N6800. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6800, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANTX2N6800 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | JANTX2N6800 vs JANTX2N6800 |
| IRFF330 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 | JANTX2N6800 vs IRFF330 |
| IRFF330-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 3A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N6800 vs IRFF330-JQR-B |
| IRFF330 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | JANTX2N6800 vs IRFF330 |
| JANTXV2N6800 | Omnirel Corp | Check for Price | Power Field-Effect Transistor, 3A I(D), 400V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205, HERMETIC SEALED, TO-205, 3 PIN | JANTX2N6800 vs JANTXV2N6800 |
| JAN2N6800 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | JANTX2N6800 vs JAN2N6800 |
| 2N6800TXV | International Rectifier | Check for Price | Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTX2N6800 vs 2N6800TXV |
| 2N6800TXV | Intersil Corporation | Check for Price | 3A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | JANTX2N6800 vs 2N6800TXV |