Part Details for JANTX2N6788 by Infineon Technologies AG
Results Overview of JANTX2N6788 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
JANTX2N6788 Information
JANTX2N6788 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTX2N6788
| Part # | Distributor | Description | Stock | Price | Buy | |
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Ameya Holding Limited | N Channel 100 V 0.3 Ω 20 W 18 nC Through Hole HexFet Power Mosfet - TO-39 | 142 |
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Buy Now RFQ |
Part Details for JANTX2N6788
JANTX2N6788 CAD Models
JANTX2N6788 Part Data Attributes
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JANTX2N6788
Infineon Technologies AG
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Datasheet
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JANTX2N6788
Infineon Technologies AG
Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, MODIFIED TO-39, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 0.242 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.35 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-205AF | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/555 | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6788
This table gives cross-reference parts and alternative options found for JANTX2N6788. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6788, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX2N6788 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | JANTX2N6788 vs JANTX2N6788 |
| 2N6788-QR-BR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | JANTX2N6788 vs 2N6788-QR-BR1 |
| IRFF120 | Rochester Electronics LLC | Check for Price | 6A, 100V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN | JANTX2N6788 vs IRFF120 |
| JANTX2N6788 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | JANTX2N6788 vs JANTX2N6788 |
| JAN2N6788 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, FORMERLY TO-39, 3 PIN | JANTX2N6788 vs JAN2N6788 |
| JANTX2N6788 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTX2N6788 vs JANTX2N6788 |
| 2N6788.MODR1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | JANTX2N6788 vs 2N6788.MODR1 |
| IRFF120 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | JANTX2N6788 vs IRFF120 |
JANTX2N6788 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the JANTX2N6788 is a standard SOT223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
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To ensure proper biasing, the JANTX2N6788 requires a minimum voltage of 10V and a maximum voltage of 30V on the drain pin, and a gate-source voltage (Vgs) between -2V and 10V.
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The maximum power dissipation of the JANTX2N6788 is 2.5W, and it is recommended to use a heat sink to ensure the device operates within the safe operating area (SOA).
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Yes, the JANTX2N6788 can be used in high-frequency applications up to 1MHz, but it is recommended to use a gate resistor and a gate capacitor to minimize ringing and ensure stable operation.
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Yes, the JANTX2N6788 is AEC-Q101 qualified, making it suitable for automotive applications, but it is recommended to consult the datasheet and application notes for specific requirements and guidelines.