Part Details for JANTX2N6786 by Intersil Corporation
Results Overview of JANTX2N6786 by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTX2N6786 Information
JANTX2N6786 by Intersil Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTX2N6786
JANTX2N6786 CAD Models
JANTX2N6786 Part Data Attributes
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JANTX2N6786
Intersil Corporation
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JANTX2N6786
Intersil Corporation
1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERSIL CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 1.25 A | |
Drain-source On Resistance-Max | 3.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 15 W | |
Pulsed Drain Current-Max (IDM) | 5.5 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6786
This table gives cross-reference parts and alternative options found for JANTX2N6786. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6786, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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2N6786.MOD | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N6786 vs 2N6786.MOD |
2N6786 | Semiconductor Technology Inc | Check for Price | Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | JANTX2N6786 vs 2N6786 |
JANTX2N6786 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, | JANTX2N6786 vs JANTX2N6786 |
2N6786 | Microchip Technology Inc | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTX2N6786 vs 2N6786 |
JAN2N6786 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, | JANTX2N6786 vs JAN2N6786 |
2N6786TX | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTX2N6786 vs 2N6786TX |
IRFF310R1 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N6786 vs IRFF310R1 |
JANTXV2N6786 | Intersil Corporation | Check for Price | 1.25A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | JANTX2N6786 vs JANTXV2N6786 |
2N6786PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTX2N6786 vs 2N6786PBF |
JAN2N6786 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | JANTX2N6786 vs JAN2N6786 |