Part Details for JANTX2N6770 by Microsemi Corporation
Results Overview of JANTX2N6770 by Microsemi Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTX2N6770 Information
JANTX2N6770 by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTX2N6770
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79T0610
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Newark | Mil 500V Single N-Channel Hi-Rel Mosfet In A To-204A A Package |Microsemi JANTX2N6770 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Bristol Electronics | 1 |
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RFQ |
Part Details for JANTX2N6770
JANTX2N6770 CAD Models
JANTX2N6770 Part Data Attributes
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JANTX2N6770
Microsemi Corporation
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Datasheet
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JANTX2N6770
Microsemi Corporation
Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-3 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-3 | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTX2N6770
This table gives cross-reference parts and alternative options found for JANTX2N6770. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6770, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX2N6770 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | JANTX2N6770 vs JANTX2N6770 |
| IRF450 | Rochester Electronics LLC | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | JANTX2N6770 vs IRF450 |
| IRF450 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | JANTX2N6770 vs IRF450 |
| IRF451 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | JANTX2N6770 vs IRF451 |
| IRF450E3 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN | JANTX2N6770 vs IRF450E3 |
| IRF450 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | JANTX2N6770 vs IRF450 |
| IRF451 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | JANTX2N6770 vs IRF451 |
| IRF451 | Rochester Electronics LLC | Check for Price | 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | JANTX2N6770 vs IRF451 |
| 2N6770 | Unitrode Corporation | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | JANTX2N6770 vs 2N6770 |
JANTX2N6770 Frequently Asked Questions (FAQ)
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The recommended storage temperature for JANTX2N6770 is -55°C to 150°C.
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Yes, JANTX2N6770 is a radiation-hardened device, designed to withstand the harsh conditions of space and other high-radiation environments.
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The maximum operating frequency of JANTX2N6770 is 100 MHz.
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No, JANTX2N6770 is a military-grade device, and its use is restricted to military and aerospace applications.
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The package type of JANTX2N6770 is a hermetically sealed ceramic package.