Part Details for JANTX2N6661 by VPT Components
Results Overview of JANTX2N6661 by VPT Components
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTX2N6661 Information
JANTX2N6661 by VPT Components is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTX2N6661
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
JANTX2N6661
|
Avnet Americas | Transistor MOSFET N-Channel 90V 0.86A 3-Pin TO-205AD - Bulk (Alt: JANTX2N6661) RoHS: Not Compliant Min Qty: 15 Package Multiple: 1 Lead time: 6 Weeks, 0 Days Container: Bulk | 0 |
|
RFQ | |
|
DISTI #
JANTX2N6661
|
TTI | MOSFETs MIL-PRF-19500/547 Min Qty: 1 Package Multiple: 1 Container: Bulk |
Americas - 2969 In Stock |
|
$76.4200 | Buy Now |
|
|
ES Components | VPT JANTX2N6661 | 0 in Stock |
|
RFQ |
Part Details for JANTX2N6661
JANTX2N6661 CAD Models
JANTX2N6661 Part Data Attributes
|
|
JANTX2N6661
VPT Components
Buy Now
Datasheet
|
Compare Parts:
JANTX2N6661
VPT Components
Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VPT COMPONENTS | |
| Package Description | TO-39, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Factory Lead Time | 6 Weeks | |
| Date Of Intro | 2020-08-03 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 90 V | |
| Drain Current-Max (ID) | 0.86 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 10 pF | |
| JEDEC-95 Code | TO-205AD | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.725 W | |
| Power Dissipation-Max (Abs) | 6.25 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
JANTX2N6661 Frequently Asked Questions (FAQ)
-
VPT recommends a PCB layout with a thermal pad connected to a large copper area to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the thermal pad should be connected to a heat sink or a metal core PCB for optimal thermal performance.
-
To ensure proper biasing, VPT recommends following the recommended operating conditions and biasing circuits outlined in the datasheet. Additionally, it's essential to ensure the device is operated within the recommended voltage and current ranges to prevent damage or degradation.
-
VPT's JANTX2N6661 is a high-reliability device designed to meet the stringent requirements of military and aerospace applications. The device is built with a failure rate of less than 1% per 1,000 hours, and VPT provides a 5-year warranty for this product.
-
Yes, the JANTX2N6661 is designed to meet the requirements of MIL-PRF-19500, which includes radiation hardness. The device is guaranteed to withstand a total ionizing dose (TID) of 100 krad(Si) and a single-event effect (SEE) of 80 MeV-cm²/mg.
-
VPT recommends storing the JANTX2N6661 in a dry, cool place, away from direct sunlight and moisture. The device should be handled with anti-static precautions, such as using an anti-static wrist strap or mat, to prevent electrostatic discharge (ESD) damage.