Part Details for JANTX2N5666S by Microsemi Corporation
Results Overview of JANTX2N5666S by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTX2N5666S Information
JANTX2N5666S by Microsemi Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTX2N5666S
JANTX2N5666S CAD Models
JANTX2N5666S Part Data Attributes
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JANTX2N5666S
Microsemi Corporation
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Datasheet
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JANTX2N5666S
Microsemi Corporation
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | TO-5 | |
Package Description | TO-5, 2 PIN | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Microsemi Corporation | |
Collector Current-Max (IC) | 5 A | |
Collector-Base Capacitance-Max | 120 pF | |
Collector-Emitter Voltage-Max | 200 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 15 | |
JEDEC-95 Code | TO-205AD | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 2.5 W | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-PRF-19500 | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 1500 ns | |
Turn-on Time-Max (ton) | 250 ns | |
VCEsat-Max | 0.4 V |
Alternate Parts for JANTX2N5666S
This table gives cross-reference parts and alternative options found for JANTX2N5666S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N5666S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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JANS2N5666S | Microchip Technology Inc | $104.4145 | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin | JANTX2N5666S vs JANS2N5666S |
JANTXV2N5666S | New England Semiconductor | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN | JANTX2N5666S vs JANTXV2N5666S |
2N5666S | New England Semiconductor | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN | JANTX2N5666S vs 2N5666S |
2N5666 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 3A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | JANTX2N5666S vs 2N5666 |
2N5666 | Spectrum Control | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | JANTX2N5666S vs 2N5666 |
JANTXV2N5666 | Solitron Devices Inc | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | JANTX2N5666S vs JANTXV2N5666 |
JANTXV2N5666S | Semicoa Semiconductors | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL CAN-3 | JANTX2N5666S vs JANTXV2N5666S |
JAN2N5666 | Unitrode Corp (RETIRED) | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | JANTX2N5666S vs JAN2N5666 |
JANTX2N5666 | New England Semiconductor | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN | JANTX2N5666S vs JANTX2N5666 |
2N5666 | Unitrode Corporation | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | JANTX2N5666S vs 2N5666 |
JANTX2N5666S Frequently Asked Questions (FAQ)
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The recommended storage temperature for JANTX2N5666S is -65°C to 150°C, as per the manufacturer's guidelines.
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Yes, JANTX2N5666S is a radiation-hardened device, designed to withstand the harsh conditions of space and other high-radiation environments.
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The maximum operating frequency of JANTX2N5666S is 100 MHz, although it can be used at higher frequencies with reduced performance.
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While JANTX2N5666S is primarily designed for military and aerospace applications, it can be used in commercial applications that require high-reliability and radiation-hardened components.
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The lead time for JANTX2N5666S can vary depending on the quantity and availability, but it is typically several weeks to several months.