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Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTX2N5666 by Microsemi Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 1 |
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JANTX2N5666
Microsemi Corporation
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Datasheet
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JANTX2N5666
Microsemi Corporation
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | TO-5 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Microsemi Corporation | |
Collector Current-Max (IC) | 5 A | |
Collector-Base Capacitance-Max | 120 pF | |
Collector-Emitter Voltage-Max | 200 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 15 | |
JEDEC-95 Code | TO-5 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 2.5 W | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-PRF-19500 | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 1500 ns | |
Turn-on Time-Max (ton) | 250 ns | |
VCEsat-Max | 0.4 V |
This table gives cross-reference parts and alternative options found for JANTX2N5666. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N5666, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
JANTXV2N5666 | MACOM | Check for Price | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, | JANTX2N5666 vs JANTXV2N5666 |
The recommended storage temperature for JANTX2N5666 is -65°C to 150°C.
Yes, JANTX2N5666 is a radiation-hardened transistor, designed to withstand the harsh conditions of space and other high-radiation environments.
The maximum collector-emitter voltage for JANTX2N5666 is 80V.
Yes, JANTX2N5666 is designed for high-reliability applications, such as aerospace, defense, and industrial control systems, where failure is not an option.
Yes, JANTX2N5666 is compatible with lead-free soldering, making it suitable for use in modern electronic assemblies.