Datasheets
JANTX2N5666 by:

Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN

Part Details for JANTX2N5666 by Microsemi Corporation

Results Overview of JANTX2N5666 by Microsemi Corporation

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JANTX2N5666 Information

JANTX2N5666 by Microsemi Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for JANTX2N5666

Part # Distributor Description Stock Price Buy
NexGen Digital   1
RFQ

Part Details for JANTX2N5666

JANTX2N5666 Part Data Attributes

JANTX2N5666 Microsemi Corporation
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JANTX2N5666 Microsemi Corporation Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Part Package Code TO-5
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Microsemi Corporation
Collector Current-Max (IC) 5 A
Collector-Base Capacitance-Max 120 pF
Collector-Emitter Voltage-Max 200 V
Configuration SINGLE
DC Current Gain-Min (hFE) 15
JEDEC-95 Code TO-5
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 2.5 W
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Reference Standard MIL-PRF-19500
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 1500 ns
Turn-on Time-Max (ton) 250 ns
VCEsat-Max 0.4 V

Alternate Parts for JANTX2N5666

This table gives cross-reference parts and alternative options found for JANTX2N5666. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N5666, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JANTXV2N5666 MACOM Check for Price Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, JANTX2N5666 vs JANTXV2N5666
Part Number Manufacturer Composite Price Description Compare
JANS2N5666S Semicoa Semiconductors Check for Price Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, JANTX2N5666 vs JANS2N5666S
JANTX2N5666 MACOM Check for Price Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, JANTX2N5666 vs JANTX2N5666

JANTX2N5666 Related Parts

JANTX2N5666 Frequently Asked Questions (FAQ)

  • The recommended storage temperature for JANTX2N5666 is -65°C to 150°C.

  • Yes, JANTX2N5666 is a radiation-hardened transistor, designed to withstand the harsh conditions of space and other high-radiation environments.

  • The maximum collector-emitter voltage for JANTX2N5666 is 80V.

  • Yes, JANTX2N5666 is designed for high-reliability applications, such as aerospace, defense, and industrial control systems, where failure is not an option.

  • Yes, JANTX2N5666 is compatible with lead-free soldering, making it suitable for use in modern electronic assemblies.

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