Part Details for JANTX2N1893 by Microsemi Corporation
Results Overview of JANTX2N1893 by Microsemi Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANTX2N1893 Information
JANTX2N1893 by Microsemi Corporation is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANTX2N1893
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 125 |
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RFQ |
Part Details for JANTX2N1893
JANTX2N1893 CAD Models
JANTX2N1893 Part Data Attributes
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JANTX2N1893
Microsemi Corporation
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Datasheet
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JANTX2N1893
Microsemi Corporation
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | BCY | |
| Package Description | SIMILAR TO TO-5, 3 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JEDEC-95 Code | TO-5 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/182F | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTX2N1893
This table gives cross-reference parts and alternative options found for JANTX2N1893. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N1893, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX2N1893S | New England Semiconductor | Check for Price | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SIMILAR TO TO-5, 3 PIN | JANTX2N1893 vs JANTX2N1893S |
| 2N1893E1 | TT Electronics Resistors | Check for Price | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N1893 vs 2N1893E1 |
| 2N1893 | Fairchild Semiconductor Corporation | Check for Price | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN | JANTX2N1893 vs 2N1893 |
| 2N1893 | General Transistor Corp | Check for Price | Small Signal Bipolar Transistor, NPN | JANTX2N1893 vs 2N1893 |
| 2N1893 | Microchip Technology Inc | Check for Price | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5 | JANTX2N1893 vs 2N1893 |
| JAN2N1893S | Microsemi Corporation | Check for Price | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, SIMILAR TO TO-5, 3 PIN | JANTX2N1893 vs JAN2N1893S |
| 2N1893-JQR-A | TT Electronics Resistors | Check for Price | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N1893 vs 2N1893-JQR-A |
| 2N1893E1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N1893 vs 2N1893E1 |
| 2N1893.MODE1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N1893 vs 2N1893.MODE1 |
| 2N1893-JQR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTX2N1893 vs 2N1893-JQR-B |
JANTX2N1893 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for JANTX2N1893 is -55°C to 150°C, but it can be operated up to 175°C with derating.
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To ensure reliability, follow the recommended storage and handling procedures, use a clean and controlled environment, and perform thorough testing and screening according to the manufacturer's guidelines.
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Yes, JANTX2N1893 is designed to be radiation-hardened and can be used in applications that require resistance to total ionizing dose (TID) and single event effects (SEE). However, it's essential to consult the manufacturer's radiation report and follow specific guidelines for radiation testing and qualification.
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The maximum allowable power dissipation for JANTX2N1893 is 1.5 W at 25°C, but it can be derated to 0.5 W at 150°C. It's essential to ensure that the device is properly heat-sinked and that the operating conditions do not exceed the maximum power dissipation rating.
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Yes, it's essential to follow good PCB layout practices, such as minimizing lead lengths, using a solid ground plane, and avoiding parallel signal traces. Additionally, ensure that the PCB material and construction can withstand the high temperatures and thermal stresses associated with the device's operation.