Part Details for JANTX2N1483 by New England Semiconductor
Results Overview of JANTX2N1483 by New England Semiconductor
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
JANTX2N1483 Information
JANTX2N1483 by New England Semiconductor is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTX2N1483
JANTX2N1483 CAD Models
JANTX2N1483 Part Data Attributes
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JANTX2N1483
New England Semiconductor
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Datasheet
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JANTX2N1483
New England Semiconductor
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin, TO-8, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
| Package Description | TO-8, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JEDEC-95 Code | TO-8 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 25 W | |
| Power Dissipation-Max (Abs) | 25 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 1.25 MHz | |
| VCEsat-Max | 2 V |