Part Details for JANSR2N7626UB by International Rectifier
Results Overview of JANSR2N7626UB by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSR2N7626UB Information
JANSR2N7626UB by International Rectifier is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSR2N7626UB
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1061 |
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RFQ |
Part Details for JANSR2N7626UB
JANSR2N7626UB CAD Models
JANSR2N7626UB Part Data Attributes
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JANSR2N7626UB
International Rectifier
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Datasheet
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JANSR2N7626UB
International Rectifier
Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UB-4
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | HERMETIC SELALED, UB-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.53 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
JANSR2N7626UB Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the JANSR2N7626UB is -55°C to 175°C.
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Yes, the JANSR2N7626UB is a radiation-hardened power MOSFET designed for high-reliability applications in harsh environments.
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The maximum drain-source voltage (Vds) rating for the JANSR2N7626UB is 600V.
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Yes, the JANSR2N7626UB is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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Yes, the JANSR2N7626UB is compatible with standard MOSFET gate drive circuits, but it may require additional protection circuitry for high-reliability applications.