Part Details for JANSR2N7626UB by Infineon Technologies AG
Results Overview of JANSR2N7626UB by Infineon Technologies AG
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- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSR2N7626UB Information
JANSR2N7626UB by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANSR2N7626UB
JANSR2N7626UB CAD Models
JANSR2N7626UB Part Data Attributes
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JANSR2N7626UB
Infineon Technologies AG
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Datasheet
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JANSR2N7626UB
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.53A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UB-4
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SELALED, UB-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.53 A | |
| Drain-source On Resistance-Max | 1.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
JANSR2N7626UB Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
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Ensure proper heat sinking, use a thermally conductive material for the PCB, and consider using a heat sink or thermal interface material. Also, follow the recommended operating conditions and derating guidelines.
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The maximum allowed voltage transient on the input pins is ±20 V, with a duration of less than 100 ns. Exceeding this may cause damage to the device.
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Yes, the JANSR2N7626UB is a JAN (Joint Army-Navy) certified device, making it suitable for high-reliability and aerospace applications. However, additional testing and qualification may be required.
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Follow standard ESD handling procedures, such as using an ESD wrist strap, ESD mat, and ESD-protected packaging. Ensure that the device is stored in a conductive bag or container.