Part Details for JANSR2N7524U2 by Infineon Technologies AG
Results Overview of JANSR2N7524U2 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Motor control systems
JANSR2N7524U2 Information
JANSR2N7524U2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANSR2N7524U2
JANSR2N7524U2 CAD Models
JANSR2N7524U2 Part Data Attributes
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JANSR2N7524U2
Infineon Technologies AG
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Datasheet
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JANSR2N7524U2
Infineon Technologies AG
Power Field-Effect Transistor, 56A I(D), 60V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AC, SMD2, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMD2, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 725 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-276AC | |
| JESD-30 Code | R-XBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 224 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for JANSR2N7524U2
This table gives cross-reference parts and alternative options found for JANSR2N7524U2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7524U2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANSF2N7524U2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | JANSR2N7524U2 vs JANSF2N7524U2 |
JANSR2N7524U2 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
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The JANSR2N7524U2 requires a specific biasing scheme to operate within its recommended operating conditions. Refer to the datasheet's application circuit and biasing diagram, and ensure that the voltage and current levels are within the specified ranges.
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Monitor the device's junction temperature (Tj), case temperature (Tc), and thermal resistance (Rth) to prevent overheating. Ensure that the device is operated within its recommended temperature range and that the thermal management system is designed to keep the device within its thermal limits.
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Follow standard ESD handling and assembly procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Ensure that the device is properly grounded during assembly and that all personnel handling the device are ESD-trained.
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Infineon provides reliability data and lifetime expectations in their datasheet and application notes. The device is designed to meet specific reliability standards, such as AEC-Q101, and its lifetime is dependent on factors like operating conditions, temperature, and usage patterns.