Part Details for JANSR2N7482T3 by Infineon Technologies AG
Results Overview of JANSR2N7482T3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
JANSR2N7482T3 Information
JANSR2N7482T3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSR2N7482T3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSR2N7482T3
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Avnet Americas | Transistor MOSFET N-Channel 30V 18A 3-Pin TO-257AA - Bulk (Alt: JANSR2N7482T3) Min Qty: 25 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ |
Part Details for JANSR2N7482T3
JANSR2N7482T3 CAD Models
JANSR2N7482T3 Part Data Attributes
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JANSR2N7482T3
Infineon Technologies AG
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Datasheet
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JANSR2N7482T3
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Additional Feature | RADIATION HARDENED | |
| Avalanche Energy Rating (Eas) | 117 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AA | |
| JESD-30 Code | R-XSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANSR2N7482T3
This table gives cross-reference parts and alternative options found for JANSR2N7482T3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7482T3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANSR2N7482T3 | International Rectifier | Check for Price | Power Field-Effect Transistor, 18A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | JANSR2N7482T3 vs JANSR2N7482T3 |