JANSR2N7482T3 by:

Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN

Part Details for JANSR2N7482T3 by Defense Logistics Agency

Results Overview of JANSR2N7482T3 by Defense Logistics Agency

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Applications Consumer Electronics Audio and Video Systems

JANSR2N7482T3 Information

JANSR2N7482T3 by Defense Logistics Agency is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for JANSR2N7482T3

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JANSR2N7482T3 Part Data Attributes

JANSR2N7482T3 Defense Logistics Agency
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JANSR2N7482T3 Defense Logistics Agency Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
Part Life Cycle Code Active
Ihs Manufacturer DEFENSE LOGISTICS AGENCY
Package Description TO-257AA, 3 PIN
Reach Compliance Code unknown
Additional Feature RADIATION HARDENED
Avalanche Energy Rating (Eas) 117 mJ
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 18 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-257AA
JESD-30 Code R-XSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Qualified
Reference Standard MIL-19500/702
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Element Material SILICON

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