Part Details for JANSR2N7482T3 by Defense Logistics Agency
Results Overview of JANSR2N7482T3 by Defense Logistics Agency
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- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSR2N7482T3 Information
JANSR2N7482T3 by Defense Logistics Agency is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANSR2N7482T3
JANSR2N7482T3 CAD Models
JANSR2N7482T3 Part Data Attributes
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JANSR2N7482T3
Defense Logistics Agency
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JANSR2N7482T3
Defense Logistics Agency
Power Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | DEFENSE LOGISTICS AGENCY | |
Package Description | TO-257AA, 3 PIN | |
Reach Compliance Code | unknown | |
Additional Feature | RADIATION HARDENED | |
Avalanche Energy Rating (Eas) | 117 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 18 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-257AA | |
JESD-30 Code | R-XSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/702 | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |