Part Details for JANSR2N7465U3 by Infineon Technologies AG
Results Overview of JANSR2N7465U3 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
JANSR2N7465U3 Information
JANSR2N7465U3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANSR2N7465U3
JANSR2N7465U3 CAD Models
JANSR2N7465U3 Part Data Attributes
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JANSR2N7465U3
Infineon Technologies AG
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Datasheet
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JANSR2N7465U3
Infineon Technologies AG
Power Field-Effect Transistor, 5A I(D), 400V, 1.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | RADIATION HARDENED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 1.39 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 60 pF | |
| JESD-30 Code | R-CBCC-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/676 | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 116 ns | |
| Turn-on Time-Max (ton) | 100 ns |
Alternate Parts for JANSR2N7465U3
This table gives cross-reference parts and alternative options found for JANSR2N7465U3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N7465U3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANSR2N7465U3 | International Rectifier | Check for Price | Power Field-Effect Transistor, 5A I(D), 400V, 1.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD0.5, 3 PIN | JANSR2N7465U3 vs JANSR2N7465U3 |
JANSR2N7465U3 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
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The JANSR2N7465U3 requires a specific biasing scheme to operate within its recommended operating conditions. Refer to the datasheet's application circuit and biasing diagram, and ensure that the voltage and current ratings are met to prevent damage or degradation.
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Monitor the device's junction temperature (Tj), case temperature (Tc), and thermal resistance (Rth) to prevent overheating. Use thermal management techniques such as heat sinks, thermal interfaces, and airflow to maintain a safe operating temperature.
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Yes, the JANSR2N7465U3 is sensitive to electrostatic discharge (ESD). Follow standard ESD protection procedures, such as using ESD-safe workstations, wrist straps, and packaging materials, to prevent damage during handling and assembly.
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Store the devices in their original packaging or in a dry, nitrogen-filled environment to prevent moisture absorption. Follow the MSL (Moisture Sensitivity Level) rating and baking procedures outlined in the datasheet to prevent damage during storage and handling.