Part Details for JANSR2N7422 by International Rectifier
Results Overview of JANSR2N7422 by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSR2N7422 Information
JANSR2N7422 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSR2N7422
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 7 |
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RFQ | ||
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Quest Components | 22 A, 100 V, 0.085 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-254AA | 30 |
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$892.5000 / $1,041.2500 | Buy Now |
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Quest Components | 22 A, 100 V, 0.085 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-254AA | 5 |
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$415.6840 / $427.9100 | Buy Now |
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Quest Components | 22 A, 100 V, 0.085 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-254AA | 1 |
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$337.5000 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for JANSR2N7422
JANSR2N7422 CAD Models
JANSR2N7422 Part Data Attributes
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JANSR2N7422
International Rectifier
Buy Now
Datasheet
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Compare Parts:
JANSR2N7422
International Rectifier
Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, CERAMIC PACKAGE-3
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | HERMETIC SEALED, CERAMIC PACKAGE-3 | |
Reach Compliance Code | compliant | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 22 A | |
Drain-source On Resistance-Max | 0.085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-CSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 88 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/662 | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
JANSR2N7422 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the JANSR2N7422 is -55°C to 150°C.
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Yes, the JANSR2N7422 is a radiation-hardened device, making it suitable for use in high-reliability applications such as aerospace and defense.
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The maximum voltage rating for the JANSR2N7422 is 200V.
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Yes, the JANSR2N7422 is suitable for high-frequency applications up to 1 MHz.
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Yes, the JANSR2N7422 is compatible with lead-free soldering processes, making it suitable for use in modern electronic assemblies.