Part Details for JANSR2N5551UBG by STMicroelectronics
Results Overview of JANSR2N5551UBG by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
JANSR2N5551UBG Information
JANSR2N5551UBG by STMicroelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSR2N5551UBG
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DISTI #
JANSR2N5551UBG
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Avnet Americas | - Bulk (Alt: JANSR2N5551UBG) RoHS: Compliant Min Qty: 100 Package Multiple: 10 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ |
Part Details for JANSR2N5551UBG
JANSR2N5551UBG CAD Models
JANSR2N5551UBG Part Data Attributes
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JANSR2N5551UBG
STMicroelectronics
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Datasheet
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JANSR2N5551UBG
STMicroelectronics
Rad-Hard 160 V, 0.5 A NPN transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Emitter Voltage-Max | 160 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-PDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
JANSR2N5551UBG Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JANSR2N5551UBG is -55°C to 150°C, as it is a radiation-hardened device designed for aerospace and defense applications.
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The JANSR2N5551UBG is designed to withstand radiation exposure up to 100 krad (Si) total dose, making it suitable for use in harsh radiation environments such as space and nuclear applications.
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The maximum voltage that can be applied to the JANSR2N5551UBG is 80V, as specified in the datasheet. Exceeding this voltage may damage the device.
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Yes, the JANSR2N5551UBG is designed for high-reliability applications, including aerospace, defense, and industrial control systems, due to its radiation-hardened design and high-quality manufacturing process.
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The typical switching frequency of the JANSR2N5551UBG is up to 100 kHz, although this may vary depending on the specific application and operating conditions.