Part Details for JANSR2N3637 by Semicoa Semiconductors
Results Overview of JANSR2N3637 by Semicoa Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSR2N3637 Information
JANSR2N3637 by Semicoa Semiconductors is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSR2N3637
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSR2N3637
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Avnet Americas | Transistor GP BJT PNP 175V 0.001A 3-Pin TO-39 Tray - Bulk (Alt: JANSR2N3637) RoHS: Not Compliant Min Qty: 50 Package Multiple: 50 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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$64.9407 / $77.4060 | Buy Now |
Part Details for JANSR2N3637
JANSR2N3637 CAD Models
JANSR2N3637 Part Data Attributes
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JANSR2N3637
Semicoa Semiconductors
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JANSR2N3637
Semicoa Semiconductors
Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | SEMICOA CORP | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 111 Weeks | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 10 pF | |
| Collector-Emitter Voltage-Max | 175 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 60 | |
| Fall Time-Max (tf) | 150 ns | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 5 W | |
| Reference Standard | MIL-PRF-19500; MIL-STD-750; RH - 100K Rad(Si) | |
| Rise Time-Max (tr) | 100 ns | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 650 ns | |
| Turn-on Time-Max (ton) | 200 ns | |
| VCEsat-Max | 0.6 V |