Part Details for JANSR2N2907AUB/TR by Microchip Technology Inc
Results Overview of JANSR2N2907AUB/TR by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSR2N2907AUB/TR Information
JANSR2N2907AUB/TR by Microchip Technology Inc is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSR2N2907AUB/TR
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33AJ2787
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Newark | 60V 600Ma 500Mw Pnp 3 Pin Cer Rh Small-Signal Bjt Tr Ub Rohs Compliant: Yes |Microchip JANSR2N2907AUB/TR RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$53.3400 / $59.7400 | Buy Now |
DISTI #
150-JANSR2N2907AUB/TR-ND
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DigiKey | TRANS PNP 60V 0.6A UB Min Qty: 50 Lead time: 29 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$59.7402 | Buy Now |
DISTI #
JANSR2N2907AUB/TR
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Avnet Americas | Trans GP BJT PNP 60V 600mA 3-Pin SMD T/R - Tape and Reel (Alt: JANSR2N2907AUB/TR) RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Lead time: 29 Weeks, 0 Days Container: Reel | 0 |
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$49.9584 / $53.3375 | Buy Now |
DISTI #
494-JANSR2N2907AUBTR
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Mouser Electronics | Bipolar Transistors - BJT 60V 600mA 500mW PNP 3 Pin CER RH Small-Signal BJT TR RoHS: Not Compliant | 0 |
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$59.7400 | Order Now |
DISTI #
JANSR2N2907AUB/TR
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Microchip Technology Inc | RH Small-Signal BJT _ UB, Projected EOL: 2049-02-05 COO: United States of America ECCN: EAR99 Lead time: 29 Weeks, 0 Days |
0 Alternates Available |
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Buy Now | |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$52.2700 / $106.6700 | Buy Now |
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NAC | BJTs RoHS: Compliant Min Qty: 5 Package Multiple: 1 | 0 |
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$52.0400 / $60.9600 | Buy Now |
DISTI #
JANSR2N2907AUB/TR
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EBV Elektronik | Trans GP BJT PNP 60V 600mA 3Pin SMD TR (Alt: JANSR2N2907AUB/TR) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 30 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Master Electronics | RoHS: Compliant | 0 |
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$52.2700 / $106.6700 | Buy Now |
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Vyrian | Transistors | 238 |
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RFQ |
Part Details for JANSR2N2907AUB/TR
JANSR2N2907AUB/TR CAD Models
JANSR2N2907AUB/TR Part Data Attributes
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JANSR2N2907AUB/TR
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
JANSR2N2907AUB/TR
Microchip Technology Inc
Small Signal Bipolar Transistor
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.40 | |
Factory Lead Time | 29 Weeks | |
Collector Current-Max (IC) | 0.6 A | |
Collector-Base Capacitance-Max | 8 pF | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 50 | |
JESD-30 Code | R-CDSO-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | PNP | |
Power Dissipation Ambient-Max | 0.5 W | |
Power Dissipation-Max (Abs) | 0.5 W | |
Reference Standard | MIL-PRF-19500; RH - 100K Rad(Si) | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 300 ns | |
Turn-on Time-Max (ton) | 45 ns | |
VCEsat-Max | 1.6 V |
JANSR2N2907AUB/TR Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JANSR2N2907AUB/TR is -55°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range.
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To ensure the reliability of the JANSR2N2907AUB/TR in high-reliability applications, follow the recommended derating guidelines, use proper thermal management, and ensure the device is operated within its specified ratings. Additionally, consider using radiation-hardened or radiation-tolerant devices, such as those from Microchip's Radiation-Hardened (RH) or Radiation-Tolerant (RT) product lines.
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The JANSR2N2907AUB/TR is a radiation-hardened, 200V, 7A, N-Channel Rad-Hard Power MOSFET. Key differences from other similar devices include its radiation hardness, voltage rating, and current capability. Compare the datasheets of similar devices to determine the best fit for your specific application.
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Radiation-induced degradation is a concern for radiation-hardened devices like the JANSR2N2907AUB/TR. To mitigate this, follow the recommended total dose radiation testing and characterization guidelines, and consider using radiation-hardened devices with built-in radiation mitigation features. Additionally, implement proper system-level radiation hardening design techniques, such as redundancy and error correction.
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For optimal performance and reliability, follow proper PCB layout and thermal management guidelines. Ensure good thermal conductivity, use thermal vias, and provide adequate heat sinking. Keep the device away from high-power components, and use proper shielding to minimize electromagnetic interference (EMI).