Datasheets
JANSR2N2907AUB/TR by:

Small Signal Bipolar Transistor

Part Details for JANSR2N2907AUB/TR by Microchip Technology Inc

Results Overview of JANSR2N2907AUB/TR by Microchip Technology Inc

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Applications Consumer Electronics Audio and Video Systems

JANSR2N2907AUB/TR Information

JANSR2N2907AUB/TR by Microchip Technology Inc is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for JANSR2N2907AUB/TR

Part # Distributor Description Stock Price Buy
DISTI # 33AJ2787
Newark 60V 600Ma 500Mw Pnp 3 Pin Cer Rh Small-Signal Bjt Tr Ub Rohs Compliant: Yes |Microchip JANSR2N2907AUB/TR RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $59.7400
  • 100 $55.4700
  • 500 $53.3400
$53.3400 / $59.7400 Buy Now
DISTI # 150-JANSR2N2907AUB/TR-ND
DigiKey TRANS PNP 60V 0.6A UB Min Qty: 50 Lead time: 29 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 50 $59.7402
$59.7402 Buy Now
DISTI # JANSR2N2907AUB/TR
Avnet Americas Trans GP BJT PNP 60V 600mA 3-Pin SMD T/R - Tape and Reel (Alt: JANSR2N2907AUB/TR) RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Lead time: 29 Weeks, 0 Days Container: Reel 0
  • 50 $53.3375
  • 60 $52.4782
  • 110 $51.6273
  • 250 $50.7734
  • 500 $49.9584
$49.9584 / $53.3375 Buy Now
DISTI # 494-JANSR2N2907AUBTR
Mouser Electronics Bipolar Transistors - BJT 60V 600mA 500mW PNP 3 Pin CER RH Small-Signal BJT TR RoHS: Not Compliant 0
  • 50 $59.7400
$59.7400 Order Now
DISTI # JANSR2N2907AUB/TR
Microchip Technology Inc RH Small-Signal BJT _ UB, Projected EOL: 2049-02-05 COO: United States of America ECCN: EAR99 Lead time: 29 Weeks, 0 Days 0

Alternates Available
Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 13 $106.6700
  • 25 $68.2700
  • 38 $53.3400
  • 50 $52.2700
$52.2700 / $106.6700 Buy Now
NAC BJTs RoHS: Compliant Min Qty: 5 Package Multiple: 1 0
  • 1 $60.9600
  • 100 $56.1400
  • 500 $53.3400
  • 800 $52.0400
$52.0400 / $60.9600 Buy Now
DISTI # JANSR2N2907AUB/TR
EBV Elektronik Trans GP BJT PNP 60V 600mA 3Pin SMD TR (Alt: JANSR2N2907AUB/TR) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 30 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics   RoHS: Compliant 0
  • 13 $106.6700
  • 25 $68.2700
  • 38 $53.3400
  • 50 $52.2700
$52.2700 / $106.6700 Buy Now
Vyrian Transistors 238
RFQ

Part Details for JANSR2N2907AUB/TR

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JANSR2N2907AUB/TR Part Data Attributes

JANSR2N2907AUB/TR Microchip Technology Inc
Buy Now Datasheet
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JANSR2N2907AUB/TR Microchip Technology Inc Small Signal Bipolar Transistor
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.40
Factory Lead Time 29 Weeks
Collector Current-Max (IC) 0.6 A
Collector-Base Capacitance-Max 8 pF
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 50
JESD-30 Code R-CDSO-N3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.5 W
Power Dissipation-Max (Abs) 0.5 W
Reference Standard MIL-PRF-19500; RH - 100K Rad(Si)
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 45 ns
VCEsat-Max 1.6 V

JANSR2N2907AUB/TR Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the JANSR2N2907AUB/TR is -55°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range.

  • To ensure the reliability of the JANSR2N2907AUB/TR in high-reliability applications, follow the recommended derating guidelines, use proper thermal management, and ensure the device is operated within its specified ratings. Additionally, consider using radiation-hardened or radiation-tolerant devices, such as those from Microchip's Radiation-Hardened (RH) or Radiation-Tolerant (RT) product lines.

  • The JANSR2N2907AUB/TR is a radiation-hardened, 200V, 7A, N-Channel Rad-Hard Power MOSFET. Key differences from other similar devices include its radiation hardness, voltage rating, and current capability. Compare the datasheets of similar devices to determine the best fit for your specific application.

  • Radiation-induced degradation is a concern for radiation-hardened devices like the JANSR2N2907AUB/TR. To mitigate this, follow the recommended total dose radiation testing and characterization guidelines, and consider using radiation-hardened devices with built-in radiation mitigation features. Additionally, implement proper system-level radiation hardening design techniques, such as redundancy and error correction.

  • For optimal performance and reliability, follow proper PCB layout and thermal management guidelines. Ensure good thermal conductivity, use thermal vias, and provide adequate heat sinking. Keep the device away from high-power components, and use proper shielding to minimize electromagnetic interference (EMI).

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