Part Details for JANSR2N2222AUA by Semicoa Semiconductors
Results Overview of JANSR2N2222AUA by Semicoa Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANSR2N2222AUA Information
JANSR2N2222AUA by Semicoa Semiconductors is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSR2N2222AUA
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
JANSR2N2222AUA
|
Avnet Americas | Transistor GP BJT NPN 50V 0.8A 3-Pin Case UA Tray - Waffle Pack (Alt: JANSR2N2222AUA) Min Qty: 50 Package Multiple: 50 Lead time: 20 Weeks, 0 Days Container: Waffle Pack | 0 |
|
$55.4180 / $69.3595 | Buy Now |
Part Details for JANSR2N2222AUA
JANSR2N2222AUA CAD Models
JANSR2N2222AUA Part Data Attributes
|
|
JANSR2N2222AUA
Semicoa Semiconductors
Buy Now
|
Compare Parts:
JANSR2N2222AUA
Semicoa Semiconductors
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | SEMICOA CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Collector Current-Max (IC) | 0.8 A | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-XDSO-N4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/255 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| Turn-off Time-Max (toff) | 300 ns | |
| Turn-on Time-Max (ton) | 35 ns |
Alternate Parts for JANSR2N2222AUA
This table gives cross-reference parts and alternative options found for JANSR2N2222AUA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSR2N2222AUA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANSR2N2222AUA | MACOM | Check for Price | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 | JANSR2N2222AUA vs JANSR2N2222AUA |
| JANSR2N2222AUA | Microsemi Corporation | Check for Price | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 | JANSR2N2222AUA vs JANSR2N2222AUA |
| JANSR2N2222AUA | Cobham PLC | Check for Price | Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 | JANSR2N2222AUA vs JANSR2N2222AUA |
JANSR2N2222AUA Frequently Asked Questions (FAQ)
-
The recommended storage temperature for JANSR2N2222AUA is -55°C to 150°C, as per the manufacturer's guidelines.
-
Yes, the JANSR2N2222AUA transistor is designed to be radiation-hardened, making it suitable for use in high-reliability applications such as aerospace and defense.
-
The maximum power dissipation for the JANSR2N2222AUA is 1.5 W, as specified in the datasheet. However, it's recommended to derate the power dissipation based on the operating temperature and other environmental factors.
-
Yes, the JANSR2N2222AUA is suitable for switching applications due to its high switching speed and low saturation voltage. However, it's essential to ensure that the transistor is properly biased and that the switching frequency is within the recommended range.
-
Yes, the JANSR2N2222AUA is compatible with lead-free soldering processes, making it suitable for use in RoHS-compliant applications.