Part Details for JANSR2N2222AUA/TR by Microsemi Corporation
Results Overview of JANSR2N2222AUA/TR by Microsemi Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSR2N2222AUA/TR Information
JANSR2N2222AUA/TR by Microsemi Corporation is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSR2N2222AUA/TR
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1585 |
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RFQ |
Part Details for JANSR2N2222AUA/TR
JANSR2N2222AUA/TR CAD Models
JANSR2N2222AUA/TR Part Data Attributes
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JANSR2N2222AUA/TR
Microsemi Corporation
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Datasheet
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JANSR2N2222AUA/TR
Microsemi Corporation
Small Signal Bipolar Transistor,
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Collector Current-Max (IC) | 0.8 A | |
Collector-Base Capacitance-Max | 8 pF | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-XDSO-N4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 0.65 W | |
Power Dissipation-Max (Abs) | 0.65 W | |
Reference Standard | MIL-PRF-19500; RH - 100K Rad(Si) | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 300 ns | |
Turn-on Time-Max (ton) | 35 ns | |
VCEsat-Max | 1 V |