Part Details for JANSP2N3634UB/TR by Microchip Technology Inc
Results Overview of JANSP2N3634UB/TR by Microchip Technology Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSP2N3634UB/TR Information
JANSP2N3634UB/TR by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSP2N3634UB/TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSP2N3634UB/TR
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Microchip Technology Inc | RH Small-Signal BJT _ UB, Projected EOL: 2049-02-05 COO: United States of America ECCN: EAR99 Lead time: 29 Weeks, 0 Days |
0 Alternates Available |
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Buy Now | |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$1,229.2500 / $3,515.3300 | Buy Now |
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NAC | BJTs RoHS: Compliant Min Qty: 50 Package Multiple: 1 | 0 |
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RFQ | |
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Master Electronics | RoHS: Compliant | 0 |
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$1,229.2500 / $3,515.3300 | Buy Now |
Part Details for JANSP2N3634UB/TR
JANSP2N3634UB/TR CAD Models
JANSP2N3634UB/TR Part Data Attributes
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JANSP2N3634UB/TR
Microchip Technology Inc
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Datasheet
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JANSP2N3634UB/TR
Microchip Technology Inc
Power Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Ceramic, Metal-Sealed Cofired, 3 Pin
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| Factory Lead Time | 29 Weeks | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Base Capacitance-Max | 10 pF | |
| Collector-Emitter Voltage-Max | 140 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-CDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 1.5 W | |
| Reference Standard | MIL-PRF-19500; RH - 30K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.6 V |