Part Details for JANSH2N7380 by Infineon Technologies AG
Results Overview of JANSH2N7380 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSH2N7380 Information
JANSH2N7380 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANSH2N7380
JANSH2N7380 CAD Models
JANSH2N7380 Part Data Attributes
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JANSH2N7380
Infineon Technologies AG
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Datasheet
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JANSH2N7380
Infineon Technologies AG
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-257AA, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A001.A.1.A | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14.4 A | |
| Drain-source On Resistance-Max | 0.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-257AA | |
| JESD-30 Code | R-XSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 58 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/614 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANSH2N7380
This table gives cross-reference parts and alternative options found for JANSH2N7380. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSH2N7380, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRHY7130CMPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | JANSH2N7380 vs IRHY7130CMPBF |
| IRHY8130CMPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | JANSH2N7380 vs IRHY8130CMPBF |
| IRHY8130CM | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | JANSH2N7380 vs IRHY8130CM |
| JANSR2N7380 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | JANSH2N7380 vs JANSR2N7380 |
| JANSG2N7380 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | JANSH2N7380 vs JANSG2N7380 |
| JANSH2N7380 | International Rectifier | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | JANSH2N7380 vs JANSH2N7380 |
| JANSG2N7380 | International Rectifier | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | JANSH2N7380 vs JANSG2N7380 |
| IRHY7130CM | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, TO-257AA, 3 PIN | JANSH2N7380 vs IRHY7130CM |
| JANSR2N7380 | Defense Logistics Agency | Check for Price | Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | JANSH2N7380 vs JANSR2N7380 |