Part Details for JANSG2N7469U2 by Infineon Technologies AG
Results Overview of JANSG2N7469U2 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
JANSG2N7469U2 Information
JANSG2N7469U2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSG2N7469U2
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DISTI #
JANSG2N7469U2
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Avnet Americas | Transistor MOSFET N-Channel 100V 75A 3-Pin CSMD - Bulk (Alt: JANSG2N7469U2) Min Qty: 25 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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Part Details for JANSG2N7469U2
JANSG2N7469U2 CAD Models
JANSG2N7469U2 Part Data Attributes
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JANSG2N7469U2
Infineon Technologies AG
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Datasheet
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JANSG2N7469U2
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A001.A.1.A | |
| Factory Lead Time | 111 Weeks | |
| Avalanche Energy Rating (Eas) | 363 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/673 | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
JANSG2N7469U2 Frequently Asked Questions (FAQ)
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Infineon recommends a PCB layout with a thermal pad connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended. Additionally, it's essential to ensure good thermal conductivity between the device and the heat sink.
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To ensure reliable operation in high-temperature environments, it's crucial to follow the recommended operating temperature range (TJ) of -55°C to 175°C. Additionally, consider using a heat sink with a thermal interface material (TIM) to reduce thermal resistance. Ensure proper PCB design, component selection, and thermal management to prevent overheating.
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Infineon recommends soldering the JANSG2N7469U2 using a reflow soldering process with a peak temperature of 260°C (±5°C) and a dwell time of 20-30 seconds. The device is also compatible with wave soldering, but the temperature and dwell time should be adjusted accordingly.
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To prevent electrostatic discharge (ESD) damage, handle the JANSG2N7469U2 in an ESD-protected environment. Use ESD-protective packaging, wrist straps, and mats during assembly. Ensure that all equipment and tools are properly grounded, and follow proper handling procedures to prevent static electricity buildup.
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Store the JANSG2N7469U2 in its original packaging or in a dry, cool place with a relative humidity of 50% or less. Avoid exposing the device to direct sunlight, moisture, or extreme temperatures. Store the device at a temperature range of -40°C to 30°C to prevent damage.