Part Details for JANSF2N7616UBN by International Rectifier
Results Overview of JANSF2N7616UBN by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANSF2N7616UBN Information
JANSF2N7616UBN by International Rectifier is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSF2N7616UBN
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Vyrian | Transistors | 1463 |
|
RFQ |
Part Details for JANSF2N7616UBN
JANSF2N7616UBN CAD Models
JANSF2N7616UBN Part Data Attributes
|
|
JANSF2N7616UBN
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
JANSF2N7616UBN
International Rectifier
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBN-4
|
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | HERMETIC SELALED, UBN-4 | |
| Reach Compliance Code | unknown | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.8 A | |
| Drain-source On Resistance-Max | 0.68 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/744 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |