Part Details for JANSF2N7616UBN by Infineon Technologies AG
Results Overview of JANSF2N7616UBN by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSF2N7616UBN Information
JANSF2N7616UBN by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSF2N7616UBN
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSF2N7616UBN
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Avnet Americas | - Bulk (Alt: JANSF2N7616UBN) Min Qty: 25 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ |
Part Details for JANSF2N7616UBN
JANSF2N7616UBN CAD Models
JANSF2N7616UBN Part Data Attributes
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JANSF2N7616UBN
Infineon Technologies AG
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Datasheet
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JANSF2N7616UBN
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SELALED, UBN-4
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.8 A | |
| Drain-source On Resistance-Max | 0.68 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/744 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
JANSF2N7616UBN Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
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The JANSF2N7616UBN requires a specific biasing scheme to operate within its recommended operating conditions. Refer to the datasheet's application circuit and biasing diagram, and ensure that the voltage and current levels are within the specified ranges.
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Monitor the device's junction temperature (Tj), case temperature (Tc), and thermal resistance (Rth) to prevent overheating. Ensure that the device is operated within its recommended temperature range and that the thermal management system is designed to keep the device within its thermal limits.
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Follow standard ESD handling and assembly procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Ensure that the device is properly grounded during assembly and that all personnel handling the device are trained in ESD prevention techniques.
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The JANSF2N7616UBN is designed to meet high-reliability standards, with a typical lifetime of 10-15 years or more, depending on operating conditions and environmental factors. Refer to Infineon's reliability data and application notes for more information on the device's expected lifetime and reliability.