Part Details for JANSF2N7480U3 by Infineon Technologies AG
Results Overview of JANSF2N7480U3 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
JANSF2N7480U3 Information
JANSF2N7480U3 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSF2N7480U3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JANSF2N7480U3
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Avnet Americas | Transistor MOSFET N-Channel 60V 22A 3-Pin CSMD - Bulk (Alt: JANSF2N7480U3) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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RFQ |
Part Details for JANSF2N7480U3
JANSF2N7480U3 CAD Models
JANSF2N7480U3 Part Data Attributes
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JANSF2N7480U3
Infineon Technologies AG
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Datasheet
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JANSF2N7480U3
Infineon Technologies AG
Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/703 | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
JANSF2N7480U3 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
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The JANSF2N7480U3 requires a specific biasing scheme to operate within its recommended operating conditions. Refer to the datasheet's application circuit and biasing diagram, and ensure that the voltage and current levels are within the specified ranges.
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Operating the JANSF2N7480U3 beyond its recommended operating conditions can lead to reduced performance, increased power consumption, and potentially even device failure. It is essential to ensure that the device is operated within its specified voltage, current, and temperature ranges to guarantee reliable operation and prevent damage.
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Infineon provides a troubleshooting guide in their application note AN2013-02, which includes steps to identify and resolve common issues with the JANSF2N7480U3. Additionally, engineers can consult the datasheet's error detection and correction mechanisms, as well as Infineon's technical support resources.
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Yes, the JANSF2N7480U3 is a sensitive device and requires proper ESD protection during handling and assembly. Infineon recommends following standard ESD precautions, such as using an ESD wrist strap, ESD mat, and ESD-safe packaging materials to prevent damage to the device.