Part Details for JANS2N3506 by Microchip Technology Inc
Results Overview of JANS2N3506 by Microchip Technology Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JANS2N3506 Information
JANS2N3506 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANS2N3506
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61AJ5974
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Newark | 40V 3A 1W Power Bjt Tht To-39 Rohs Compliant: Yes |Microchip JANS2N3506 RoHS: Compliant Min Qty: 50 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$62.7900 / $70.3200 | Buy Now |
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DISTI #
150-JANS2N3506-ND
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DigiKey | TRANS NPN 40V 3A TO39 Min Qty: 50 Lead time: 22 Weeks Container: Bulk | Temporarily Out of Stock |
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$70.3204 | Buy Now |
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DISTI #
JANS2N3506
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Avnet Americas | Transistor BJT NPN 40V 3A 3-Pin TO-39 - Bulk (Alt: JANS2N3506) RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Lead time: 22 Weeks, 0 Days Container: Bulk | 0 |
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$58.8096 / $62.7875 | Buy Now |
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DISTI #
579-JANS2N3506
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Mouser Electronics | Bipolar Transistors - BJT 40V 3A 1W Power BJT THT RoHS: Not Compliant | 0 |
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$65.3000 / $70.3200 | Order Now |
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DISTI #
JANS2N3506
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Microchip Technology Inc | Power BJT _ TO-39, Projected EOL: 2049-02-05 COO: United States of America ECCN: EAR99 Lead time: 22 Weeks, 0 Days |
0 Alternates Available |
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Buy Now | |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$61.5300 / $164.2100 | Buy Now |
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NAC | Power BJT, TO-39 RoHS: Compliant Min Qty: 4 Package Multiple: 1 | 0 |
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$61.2600 / $71.7600 | Buy Now |
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Master Electronics | RoHS: Compliant | 0 |
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$61.5300 / $164.2100 | Buy Now |
Part Details for JANS2N3506
JANS2N3506 CAD Models
JANS2N3506 Part Data Attributes
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JANS2N3506
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
JANS2N3506
Microchip Technology Inc
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | HERMETIC SEALED, METAL CAN-3 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 22 Weeks | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 25 | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 5 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/349 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 60 MHz | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 45 ns |
Alternate Parts for JANS2N3506
This table gives cross-reference parts and alternative options found for JANS2N3506. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANS2N3506, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX2N3506A | Microchip Technology Inc | $16.3937 | Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | JANS2N3506 vs JANTX2N3506A |
| JANTX2N3506 | Microchip Technology Inc | $20.2003 | Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205 | JANS2N3506 vs JANTX2N3506 |
| 2N3506 | Semiconductor Technology Inc | Check for Price | Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | JANS2N3506 vs 2N3506 |
| JAN2N3506 | Motorola Semiconductor Products | Check for Price | Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD | JANS2N3506 vs JAN2N3506 |
| 2N3506 | Silicon Transistor Corporation | Check for Price | Small Signal Bipolar Transistor, 3A I(C), 1-Element, NPN, Silicon, TO-205, TO-5, 3 PIN | JANS2N3506 vs 2N3506 |
| JAN2N3506A | Motorola Mobility LLC | Check for Price | 3000mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, HERMETIC SEALED, METAL CAN-3 | JANS2N3506 vs JAN2N3506A |
| JAN2N3506AL | Microchip Technology Inc | Check for Price | Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5 | JANS2N3506 vs JAN2N3506AL |
| JANTXV2N3506A | Motorola Semiconductor Products | Check for Price | Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 | JANS2N3506 vs JANTXV2N3506A |
| JANTXV2N3506A | Microsemi Corporation | Check for Price | Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 | JANS2N3506 vs JANTXV2N3506A |
| 2N3506 | International Devices Inc | Check for Price | Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | JANS2N3506 vs 2N3506 |
JANS2N3506 Frequently Asked Questions (FAQ)
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A recommended PCB layout for optimal thermal performance would be to use a thermal pad on the bottom of the transistor, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, keeping the transistor away from other heat sources and using thermal vias can also improve thermal performance.
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To select the correct base resistor value, you need to consider the transistor's current gain (hFE), the collector current, and the voltage supply. A general rule of thumb is to choose a base resistor that limits the base current to 1/10th of the collector current. You can use online calculators or consult application notes from Microchip Technology Inc for more guidance.
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The maximum safe operating area (SOA) for the JANS2N3506 transistor is not explicitly stated in the datasheet. However, you can use the transistor's voltage and current ratings to determine the SOA. As a general guideline, the SOA is typically defined as the area where the transistor can operate safely without overheating or experiencing electrical stress. You can consult with Microchip Technology Inc's application engineers or use simulation tools to determine the SOA for your specific application.
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Yes, the JANS2N3506 transistor can be used in switching applications. However, you need to consider the transistor's switching frequency, rise and fall times, and the potential for electromagnetic interference (EMI). You should also ensure that the transistor is properly biased and that the base drive is sufficient to minimize switching losses. Additionally, consider using a snubber circuit to reduce voltage spikes and ringing.
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To handle ESD protection for the JANS2N3506 transistor, you can use external ESD protection devices such as TVS diodes or ESD arrays. You should also follow proper handling and storage procedures to prevent ESD damage. Additionally, consider using a PCB layout that minimizes the risk of ESD damage, such as keeping the transistor away from board edges and using ESD-protective materials.