Part Details for JAN2N7224 by Microsemi Corporation
Results Overview of JAN2N7224 by Microsemi Corporation
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JAN2N7224 Information
JAN2N7224 by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JAN2N7224
JAN2N7224 CAD Models
JAN2N7224 Part Data Attributes
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JAN2N7224
Microsemi Corporation
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Datasheet
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JAN2N7224
Microsemi Corporation
Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-254AA | |
| Package Description | CERAMIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 34 A | |
| Drain-source On Resistance-Max | 0.081 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-CSFM-P3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 136 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
JAN2N7224 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JAN2N7224 is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
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To ensure proper biasing, the JAN2N7224 requires a minimum of 10V on the gate-to-source voltage (Vgs) and a maximum of 20V on the drain-to-source voltage (Vds). Additionally, the gate current (Ig) should be limited to 10mA.
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The maximum power dissipation for the JAN2N7224 is 125W, but this can be derated based on the operating temperature and other factors. It's essential to perform thermal calculations to ensure the device operates within safe limits.
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Yes, the JAN2N7224 can be used in switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the switching frequency is within the recommended range.
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To protect the JAN2N7224 from ESD, it's recommended to handle the device with anti-static wrist straps, mats, or other ESD protection devices. Additionally, the device should be stored in anti-static packaging and handled in a controlled environment.