Part Details for JAN2N6756 by Defense Logistics Agency
Results Overview of JAN2N6756 by Defense Logistics Agency
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
JAN2N6756 Information
JAN2N6756 by Defense Logistics Agency is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JAN2N6756
JAN2N6756 CAD Models
JAN2N6756 Part Data Attributes
|
|
JAN2N6756
Defense Logistics Agency
Buy Now
Datasheet
|
Compare Parts:
JAN2N6756
Defense Logistics Agency
Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DEFENSE LOGISTICS AGENCY | |
| Package Description | TO-3, 2 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/542G | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JAN2N6756
This table gives cross-reference parts and alternative options found for JAN2N6756. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6756, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF230EBPBF | Infineon Technologies AG | Check for Price | 9A, 200V, 0.49ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | JAN2N6756 vs IRF230EBPBF |
| IRF232 | Rochester Electronics LLC | Check for Price | 8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | JAN2N6756 vs IRF232 |
| IRF130EC | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | JAN2N6756 vs IRF130EC |
| IRF131R | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | JAN2N6756 vs IRF131R |
| IRF130SMD-JQR-BR4 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | JAN2N6756 vs IRF130SMD-JQR-BR4 |
| IRF233R | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | JAN2N6756 vs IRF233R |
| IRF230-QR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN | JAN2N6756 vs IRF230-QR-B |
| IRF140 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | JAN2N6756 vs IRF140 |
| IRF130PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | JAN2N6756 vs IRF130PBF |
| JANTXV2N6758 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | JAN2N6756 vs JANTXV2N6758 |