Part Details for JAN2N6250 by New England Semiconductor
Results Overview of JAN2N6250 by New England Semiconductor
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JAN2N6250 Information
JAN2N6250 by New England Semiconductor is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JAN2N6250
JAN2N6250 CAD Models
JAN2N6250 Part Data Attributes
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JAN2N6250
New England Semiconductor
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Datasheet
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JAN2N6250
New England Semiconductor
Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204, Metal, 2 Pin,
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEW ENGLAND SEMICONDUCTOR | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 10 A | |
Collector-Emitter Voltage-Max | 300 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 8 | |
JEDEC-95 Code | TO-204 | |
JESD-30 Code | O-MBFM-P2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Reference Standard | MIL | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |