Part Details for JAN2N5667 by Microsemi Corporation
Results Overview of JAN2N5667 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Audio and Video Systems
JAN2N5667 Information
JAN2N5667 by Microsemi Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JAN2N5667
JAN2N5667 CAD Models
JAN2N5667 Part Data Attributes
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JAN2N5667
Microsemi Corporation
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Datasheet
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JAN2N5667
Microsemi Corporation
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | TO-5 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Collector Current-Max (IC) | 5 A | |
| Collector-Base Capacitance-Max | 120 pF | |
| Collector-Emitter Voltage-Max | 300 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| JEDEC-95 Code | TO-5 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1.2 W | |
| Power Dissipation-Max (Abs) | 1.2 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-PRF-19500 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 2000 ns | |
| Turn-on Time-Max (ton) | 250 ns | |
| VCEsat-Max | 0.4 V |
Alternate Parts for JAN2N5667
This table gives cross-reference parts and alternative options found for JAN2N5667. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N5667, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| JANS2N5667 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN | JAN2N5667 vs JANS2N5667 |
| JANS2N5665 | Semicoa Semiconductors | Check for Price | Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | JAN2N5667 vs JANS2N5665 |
| JAN2N5665 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | JAN2N5667 vs JAN2N5665 |
| JANTX2N5665 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | JAN2N5667 vs JANTX2N5665 |
| JANTXV2N5665 | Semicoa Semiconductors | Check for Price | Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | JAN2N5667 vs JANTXV2N5665 |
| JANS2N5667S | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin, TO-5, 2 PIN | JAN2N5667 vs JANS2N5667S |
JAN2N5667 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JAN2N5667 is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
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To ensure proper biasing, the JAN2N5667 requires a minimum of 10V on the collector-emitter voltage (Vce) and a base-emitter voltage (Vbe) of around 1.2V to 1.4V. Additionally, the base current (Ib) should be limited to 5mA to prevent overheating.
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The maximum power dissipation for the JAN2N5667 is 20W, and it's essential to ensure the device is properly heat-sinked to prevent overheating and damage.
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Yes, the JAN2N5667 can be used as a switch, but it's essential to ensure the device is properly biased and the collector-emitter voltage (Vce) is sufficient to handle the desired current. Additionally, the device's switching speed and frequency should be considered to prevent overheating and ensure reliable operation.
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To protect the JAN2N5667 from ESD, it's essential to handle the device with anti-static wrist straps, mats, or other ESD protection devices. Additionally, the device should be stored in anti-static packaging and handled in a controlled environment to prevent damage.