Datasheets
JAN2N3635L by:

Small Signal Bipolar Transistor,

Part Details for JAN2N3635L by VPT Components

Results Overview of JAN2N3635L by VPT Components

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JAN2N3635L Information

JAN2N3635L by VPT Components is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for JAN2N3635L

Part # Distributor Description Stock Price Buy
DISTI # JAN2N3635L
Avnet Americas - Bulk (Alt: JAN2N3635L) Min Qty: 66 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk 0
  • 66 $18.7267
  • 70 $18.4222
  • 140 $18.1178
  • 330 $17.8133
  • 660 $17.5087
$17.5087 / $18.7267 Buy Now
DISTI # JAN2N3635L
TTI Bipolar Transistors - BJT MIL-PRF-19500/357 Min Qty: 35 Package Multiple: 1 Container: Bulk Americas - 0
  • 35 $21.1500
$21.1500 Buy Now

Part Details for JAN2N3635L

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JAN2N3635L Part Data Attributes

JAN2N3635L VPT Components
Buy Now Datasheet
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JAN2N3635L VPT Components Small Signal Bipolar Transistor,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer VPT COMPONENTS
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 111 Weeks
Collector Current-Max (IC) 1 A
Collector-Base Capacitance-Max 10 pF
Collector-Emitter Voltage-Max 140 V
Configuration SINGLE
DC Current Gain-Min (hFE) 60
JEDEC-95 Code TO-5
JESD-30 Code O-MBCY-W3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Qualified
Reference Standard MIL-19500
Surface Mount NO
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 650 ns
Turn-on Time-Max (ton) 200 ns
VCEsat-Max 0.6 V

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