Part Details for JAN2N3506 by Vishay Semiconductors
Results Overview of JAN2N3506 by Vishay Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JAN2N3506 Information
JAN2N3506 by Vishay Semiconductors is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JAN2N3506
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,BJT,NPN,40V V(BR)CEO,3A I(C),TO-5 | 5 |
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$29.4870 | Buy Now |
Part Details for JAN2N3506
JAN2N3506 CAD Models
JAN2N3506 Part Data Attributes
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JAN2N3506
Vishay Semiconductors
Buy Now
Datasheet
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JAN2N3506
Vishay Semiconductors
Small Signal Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | GENERAL SEMICONDUCTOR INC | |
| Reach Compliance Code | unknown | |
| Collector Current-Max (IC) | 3 A | |
| Collector-Base Capacitance-Max | 40 pF | |
| Collector-Emitter Voltage-Max | 40 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 25 | |
| JEDEC-95 Code | TO-205AD | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 5 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 60 MHz | |
| Turn-off Time-Max (toff) | 90 ns | |
| Turn-on Time-Max (ton) | 45 ns | |
| VCEsat-Max | 1.5 V |