Part Details for JAN2N3501UB by VPT Components
Results Overview of JAN2N3501UB by VPT Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JAN2N3501UB Information
JAN2N3501UB by VPT Components is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JAN2N3501UB
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JAN2N3501UB
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Avnet Americas | - Bulk (Alt: JAN2N3501UB) Min Qty: 74 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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$15.6975 / $16.7895 | Buy Now |
Part Details for JAN2N3501UB
JAN2N3501UB CAD Models
JAN2N3501UB Part Data Attributes
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JAN2N3501UB
VPT Components
Buy Now
Datasheet
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JAN2N3501UB
VPT Components
Small Signal Bipolar Transistor,
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VPT COMPONENTS | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 111 Weeks | |
| Date Of Intro | 2019-08-29 | |
| Collector Current-Max (IC) | 0.3 A | |
| Collector-Base Capacitance-Max | 8 pF | |
| Collector-Emitter Voltage-Max | 150 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 20 | |
| JESD-30 Code | R-CDSO-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 1150 ns | |
| Turn-on Time-Max (ton) | 115 ns | |
| VCEsat-Max | 0.4 V |