Part Details for JAN2N1485 by VPT Components
Results Overview of JAN2N1485 by VPT Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JAN2N1485 Information
JAN2N1485 by VPT Components is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JAN2N1485
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JAN2N1485
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Avnet Americas | Power Transistor NPN 3-Pin TO-8 - Bulk (Alt: JAN2N1485) RoHS: Not Compliant Min Qty: 8 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Bulk | 0 |
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$154.0770 / $164.7954 | Buy Now |
DISTI #
JAN2N1485
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TTI | Bipolar Transistors - BJT MIL-PRF-19500/180 Min Qty: 5 Package Multiple: 1 Container: Bulk | Americas - 0 |
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$186.0800 | Buy Now |
Part Details for JAN2N1485
JAN2N1485 CAD Models
JAN2N1485 Part Data Attributes
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JAN2N1485
VPT Components
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Datasheet
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JAN2N1485
VPT Components
Power Bipolar Transistor,
|
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VPT COMPONENTS | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 111 Weeks | |
Date Of Intro | 2019-08-23 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 3 A | |
Collector-Base Capacitance-Max | 400 pF | |
Collector-Emitter Voltage-Max | 40 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 35 | |
JEDEC-95 Code | TO-8 | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 1.75 W | |
Power Dissipation-Max (Abs) | 25 W | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500 | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 0.6 MHz | |
VCEsat-Max | 0.75 V |