Part Details for JAN2N1485 by Microsemi Corporation
Results Overview of JAN2N1485 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JAN2N1485 Information
JAN2N1485 by Microsemi Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JAN2N1485
JAN2N1485 CAD Models
JAN2N1485 Part Data Attributes
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JAN2N1485
Microsemi Corporation
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Datasheet
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JAN2N1485
Microsemi Corporation
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin, TO-8, 3 PIN
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | TO-8 | |
Package Description | TO-8, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 40 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 35 | |
JEDEC-95 Code | TO-8 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-S-19500/180D | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 1.25 MHz |
Alternate Parts for JAN2N1485
This table gives cross-reference parts and alternative options found for JAN2N1485. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N1485, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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JAN2N1485 | Spectrum Control | Check for Price | Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin | JAN2N1485 vs JAN2N1485 |
JAN2N1485 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the JAN2N1485 is -55°C to 200°C.
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Yes, the JAN2N1485 is a radiation-hardened transistor, designed to withstand the harsh conditions of space and other high-radiation environments.
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The maximum collector-emitter voltage (Vce) for the JAN2N1485 is 400V.
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Yes, the JAN2N1485 is designed for high-reliability applications, such as aerospace, defense, and industrial systems, where failure is not an option.
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Yes, the JAN2N1485 is compatible with lead-free soldering, making it suitable for modern manufacturing processes.