Part Details for JAN1N827-1 by Microsemi Corporation
Results Overview of JAN1N827-1 by Microsemi Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
JAN1N827-1 Information
JAN1N827-1 by Microsemi Corporation is a Zener Diode.
Zener Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for JAN1N827-1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | ZENER DIODE,SINGLE, TWO TERMINAL,6.2V V(Z),5%,DO-35 | 1 |
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$14.2232 | Buy Now |
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NexGen Digital | 150 |
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RFQ |
Part Details for JAN1N827-1
JAN1N827-1 CAD Models
JAN1N827-1 Part Data Attributes
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JAN1N827-1
Microsemi Corporation
Buy Now
Datasheet
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Compare Parts:
JAN1N827-1
Microsemi Corporation
Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Package Code | DO-7 | |
| Package Description | DO-35, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.50 | |
| Additional Feature | METALLURGICALLY BONDED | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | ZENER DIODE | |
| Dynamic Impedance-Max | 15 Ω | |
| JEDEC-95 Code | DO-204AH | |
| JESD-30 Code | O-LALF-W2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Power Dissipation-Max | 0.5 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500 | |
| Reference Voltage-Nom | 6.2 V | |
| Reverse Current-Max | 2 µA | |
| Reverse Test Voltage | 3 V | |
| Surface Mount | NO | |
| Technology | ZENER | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Voltage Temp Coeff-Max | 0.062 mV/°C | |
| Voltage Tol-Max | 5% | |
| Working Test Current | 7.5 mA |
Alternate Parts for JAN1N827-1
This table gives cross-reference parts and alternative options found for JAN1N827-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N827-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 1N827A | Microchip Technology Inc | $7.4181 | Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA | JAN1N827-1 vs 1N827A |
| 1N827AE3 | Microchip Technology Inc | $7.8494 | Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA | JAN1N827-1 vs 1N827AE3 |
| 1N827153 | NXP Semiconductors | Check for Price | DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, Voltage Reference Diode | JAN1N827-1 vs 1N827153 |
| 1N827A136 | NXP Semiconductors | Check for Price | DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, Voltage Reference Diode | JAN1N827-1 vs 1N827A136 |
| JANTX1N827 | Compensated Devices Inc | Check for Price | Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN | JAN1N827-1 vs JANTX1N827 |
| 1N827A | Microsemi Corporation | Check for Price | Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN | JAN1N827-1 vs 1N827A |
| RH827-1 | Microsemi Corporation | Check for Price | Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, DO-7, HERMETIC SEALED, GLASS, DO-204AA, 2 PIN | JAN1N827-1 vs RH827-1 |
JAN1N827-1 Frequently Asked Questions (FAQ)
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The recommended mounting pad layout for the JAN1N827-1 is a rectangular pad with a minimum size of 0.05 inches x 0.05 inches (1.27 mm x 1.27 mm) and a maximum size of 0.1 inches x 0.1 inches (2.54 mm x 2.54 mm). The pad should be centered on the device and have a non-solder-mask-defined (NSMD) pad shape.
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The JAN1N827-1 is a sensitive device and requires proper ESD protection during handling and assembly. It is recommended to use an ESD wrist strap or mat, and to handle the device by the body or leads, not the glass diode. Additionally, the device should be stored in an ESD-protective package or bag when not in use.
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The maximum allowable voltage derating for the JAN1N827-1 is 10% of the rated voltage. This means that if the device is rated for 100V, the maximum allowable voltage derating would be 10V. Exceeding this derating may affect the device's reliability and performance.
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Yes, the JAN1N827-1 can be used in a switching power supply application, but it is essential to ensure that the device is properly snubbed to prevent voltage spikes and ringing. Additionally, the device's reverse recovery time and softness factor should be considered to prevent electromagnetic interference (EMI) and ensure reliable operation.
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The junction temperature of the JAN1N827-1 can be determined using the device's thermal resistance (RθJA) and the ambient temperature. The thermal resistance is typically specified in the datasheet, and the ambient temperature can be measured using a thermometer. The junction temperature can then be calculated using the formula: Tj = Ta + (Pd x RθJA), where Tj is the junction temperature, Ta is the ambient temperature, Pd is the power dissipation, and RθJA is the thermal resistance.