Part Details for JAN1N5811US by Semtech Corporation
Results Overview of JAN1N5811US by Semtech Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
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Energy and Power Systems
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JAN1N5811US Information
JAN1N5811US by Semtech Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for JAN1N5811US
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JAN1N5811USS-ND
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DigiKey | D MET 6A SFST 150V HR SM Lead time: 28 Weeks Container: Bulk | Limited Supply - Call |
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Buy Now | |
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DISTI #
JAN1N5811US
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Avnet Americas | MIL Diode Switching 150V 6A 2-Pin SMD - Bulk (Alt: JAN1N5811US) RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Lead time: 65 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
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DISTI #
JAN1N5811US
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Avnet Silica | MIL Diode Switching 150V 6A 2Pin SMD (Alt: JAN1N5811US) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 30 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for JAN1N5811US
JAN1N5811US CAD Models
JAN1N5811US Part Data Attributes
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JAN1N5811US
Semtech Corporation
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JAN1N5811US
Semtech Corporation
Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SEMTECH CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Factory Lead Time | 65 Weeks | |
| Samacsys Manufacturer | SEMTECH | |
| Application | ULTRA FAST RECOVERY POWER | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 0.875 V | |
| JESD-30 Code | O-LELF-R2 | |
| Non-rep Pk Forward Current-Max | 125 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Output Current-Max | 6 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/477F | |
| Rep Pk Reverse Voltage-Max | 150 V | |
| Reverse Recovery Time-Max | 0.03 µs | |
| Surface Mount | YES | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for JAN1N5811US
This table gives cross-reference parts and alternative options found for JAN1N5811US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N5811US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX1N5811US | Bkc Semiconductors Inc | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon, | JAN1N5811US vs JANTX1N5811US |
| 1N5811US | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 3A, 150V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN | JAN1N5811US vs 1N5811US |
| JANS1N5811US | Sensitron Semiconductors | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 6A, 150V V(RRM), Silicon, | JAN1N5811US vs JANS1N5811US |
JAN1N5811US Frequently Asked Questions (FAQ)
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A good PCB layout for the JAN1N5811US should include a solid ground plane, short and direct traces, and a decoupling capacitor (e.g., 100nF) between the VIN and GND pins. Additionally, keep the device away from high-frequency signal lines and ensure good thermal dissipation.
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To ensure proper biasing, connect the VIN pin to a stable voltage source (e.g., 5V to 18V) and the GND pin to a solid ground plane. The EN pin should be tied to VIN or a logic signal (e.g., 3.3V or 5V) to enable the device. Avoid floating inputs and ensure a stable output voltage.
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The maximum allowed voltage drop across the JAN1N5811US is typically around 1.5V to 2V, depending on the input voltage and output current. A higher voltage drop can result in reduced output voltage, increased power dissipation, and decreased efficiency. Ensure the input voltage is sufficient to maintain the required output voltage.
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The JAN1N5811US is designed to be robust against input voltage transients and brownouts. It will typically continue to regulate the output voltage as long as the input voltage remains above the minimum specified value (around 2.5V). However, during severe transients, the output voltage may droop or the device may shut down to protect itself.
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A ceramic or electrolytic capacitor with a value of 10uF to 22uF is recommended for the input of the JAN1N5811US. This helps to filter out input noise, reduce ripple, and ensure stable operation. The capacitor should be rated for the maximum input voltage and have a low ESR (Equivalent Series Resistance).