Part Details for JAN1N5806US by Microsemi Corporation
Results Overview of JAN1N5806US by Microsemi Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JAN1N5806US Information
JAN1N5806US by Microsemi Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for JAN1N5806US
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 2.5 A, SILICON, RECTIFIER DIODE | 8 |
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$12.6428 / $14.2232 | Buy Now |
Part Details for JAN1N5806US
JAN1N5806US CAD Models
JAN1N5806US Part Data Attributes
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JAN1N5806US
Microsemi Corporation
Buy Now
Datasheet
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JAN1N5806US
Microsemi Corporation
Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon,
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Samacsys Manufacturer | Microsemi Corporation | |
| Application | ULTRA FAST RECOVERY POWER | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JESD-30 Code | O-LELF-R2 | |
| JESD-609 Code | e0 | |
| Non-rep Pk Forward Current-Max | 35 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Output Current-Max | 2.5 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/477F | |
| Rep Pk Reverse Voltage-Max | 150 V | |
| Reverse Recovery Time-Max | 0.025 µs | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for JAN1N5806US
This table gives cross-reference parts and alternative options found for JAN1N5806US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N5806US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTX1N5806US | Semtech Corporation | $16.8883 | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | JAN1N5806US vs JANTX1N5806US |
| JANTX1N5806US | Microchip Technology Inc | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon | JAN1N5806US vs JANTX1N5806US |
| JANS1N5806US | VPT Components | Check for Price | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, | JAN1N5806US vs JANS1N5806US |
| JANS1N5806US | MACOM | Check for Price | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, | JAN1N5806US vs JANS1N5806US |
| 1N5806US | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, | JAN1N5806US vs 1N5806US |
| JANTXV1N5806US | Semtech Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | JAN1N5806US vs JANTXV1N5806US |
| 1N5806US | Semtech Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 | JAN1N5806US vs 1N5806US |
| JANTXV1N5806US | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 2.5A, Silicon, | JAN1N5806US vs JANTXV1N5806US |
JAN1N5806US Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JAN1N5806US is -55°C to 150°C.
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Yes, the JAN1N5806US is a radiation-hardened device, designed to withstand the harsh conditions of space and other high-radiation environments.
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The maximum power dissipation for the JAN1N5806US is 1.5 watts.
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Yes, the JAN1N5806US is designed for high-reliability applications, such as aerospace, defense, and industrial control systems.
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The JAN1N5806US is a unique device, but it can be used in conjunction with other voltage regulators to provide a complete power management solution.