Part Details for JAN1N5551 by Semtech Corporation
Results Overview of JAN1N5551 by Semtech Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JAN1N5551 Information
JAN1N5551 by Semtech Corporation is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for JAN1N5551
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JAN1N5551S-ND
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DigiKey | DIODE STANDARD 400V 5A AXIAL Lead time: 14 Weeks Container: Bulk | Limited Supply - Call |
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Buy Now | |
DISTI #
JAN1N5551
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Avnet Americas | - Bulk (Alt: JAN1N5551) RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
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RFQ |
Part Details for JAN1N5551
JAN1N5551 CAD Models
JAN1N5551 Part Data Attributes
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JAN1N5551
Semtech Corporation
Buy Now
Datasheet
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Compare Parts:
JAN1N5551
Semtech Corporation
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SEMTECH CORP | |
Package Description | HERMETIC SEALED, G4, 2 PIN | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Factory Lead Time | 24 Weeks | |
Application | GENERAL PURPOSE | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1 V | |
JESD-30 Code | O-XALF-W2 | |
Non-rep Pk Forward Current-Max | 100 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 125 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 3 A | |
Package Body Material | UNSPECIFIED | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/420 | |
Rep Pk Reverse Voltage-Max | 400 V | |
Reverse Current-Max | 1 µA | |
Reverse Recovery Time-Max | 2 µs | |
Surface Mount | NO | |
Technology | AVALANCHE | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |
Alternate Parts for JAN1N5551
This table gives cross-reference parts and alternative options found for JAN1N5551. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N5551, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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JANTXV1N5551 | Semtech Corporation | Check for Price | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN | JAN1N5551 vs JANTXV1N5551 |
JANTX1N5551 | Semtech Corporation | Check for Price | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, HERMETIC SEALED, G4, 2 PIN | JAN1N5551 vs JANTX1N5551 |
JAN1N5551 | Micross Components | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, | JAN1N5551 vs JAN1N5551 |
MR854HR | Digitron Semiconductors | Check for Price | Rectifier Diode | JAN1N5551 vs MR854HR |
JAN3SM4 | Semtech Corporation | Check for Price | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, | JAN1N5551 vs JAN3SM4 |
JANS3SM4 | Micross Components | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, | JAN1N5551 vs JANS3SM4 |
UF5404GP | Micro Commercial Components | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN | JAN1N5551 vs UF5404GP |
JAN1N5551 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JAN1N5551 is -55°C to 125°C, although it can withstand storage temperatures from -65°C to 150°C.
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Yes, the JAN1N5551 is a radiation-hardened device, designed to withstand the harsh conditions of space and other high-radiation environments.
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The maximum power dissipation for the JAN1N5551 is 1.5 watts, although this can be affected by the operating temperature and other factors.
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Yes, the JAN1N5551 is designed for high-reliability applications, such as aerospace, defense, and industrial control systems, where failure is not an option.
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Yes, the JAN1N5551 is a drop-in replacement for other 1N5551 devices, although its radiation-hardened design and high-reliability features make it more suitable for demanding applications.