Part Details for JAN1N5420US by Microchip Technology Inc
Results Overview of JAN1N5420US by Microchip Technology Inc
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
JAN1N5420US Information
JAN1N5420US by Microchip Technology Inc is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Price & Stock for JAN1N5420US
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
35AJ6770
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Newark | 660V 3A Ufr, frr Sq Smt B-Body Sq. Melf Rohs Compliant: Yes |Microchip JAN1N5420US RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$9.2000 / $9.5700 | Buy Now |
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DISTI #
1086-2095-ND
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DigiKey | DIODE STANDARD 600V 3A D5B Min Qty: 100 Lead time: 24 Weeks Container: Bulk | Temporarily Out of Stock |
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$9.5701 | Buy Now |
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DISTI #
JAN1N5420US
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Avnet Americas | Diode Fast Recovery Rectifier 600V 3A 2-Pin MELF - Bulk (Alt: JAN1N5420US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
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$9.0307 / $9.6195 | Buy Now |
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DISTI #
494-JAN1N5420US
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Mouser Electronics | Rectifiers 660V 3A UFR,FRR SQ SMT RoHS: Not Compliant | 0 |
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$9.5500 / $9.5700 | Order Now |
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DISTI #
JAN1N5420US
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Microchip Technology Inc | UFR,FRR _ B-Body Sq. Melf, Projected EOL: 2049-02-05 COO: Philippines ECCN: EAR99 Lead time: 24 Weeks, 0 Days |
0 Alternates Available |
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$10.3000 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$10.1000 / $14.7200 | Buy Now |
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NAC | Rectifier RoHS: Compliant Min Qty: 33 Package Multiple: 1 | 0 |
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$8.9800 / $10.8200 | Buy Now |
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Master Electronics | RoHS: Compliant | 0 |
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$10.1000 / $14.7200 | Buy Now |
Part Details for JAN1N5420US
JAN1N5420US CAD Models
JAN1N5420US Part Data Attributes
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JAN1N5420US
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
JAN1N5420US
Microchip Technology Inc
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | MELF-2 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 24 Weeks | |
| Additional Feature | HIGH RELIABILITY | |
| Application | FAST RECOVERY | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| Forward Voltage-Max (VF) | 1.5 V | |
| JESD-30 Code | O-LELF-R2 | |
| JESD-609 Code | e0 | |
| Non-rep Pk Forward Current-Max | 80 A | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -65 °C | |
| Output Current-Max | 3 A | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Rep Pk Reverse Voltage-Max | 600 V | |
| Reverse Current-Max | 1 µA | |
| Reverse Recovery Time-Max | 0.4 µs | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WRAP AROUND | |
| Terminal Position | END |
Alternate Parts for JAN1N5420US
This table gives cross-reference parts and alternative options found for JAN1N5420US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N5420US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| 1N5420E3 | Microchip Technology Inc | $8.0824 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon | JAN1N5420US vs 1N5420E3 |
| SX5420US | Sensitron Semiconductors | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, D-5, MELF-2 | JAN1N5420US vs SX5420US |
| 3JH45TPA2 | Toshiba America Electronic Components | Check for Price | DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, Rectifier Diode | JAN1N5420US vs 3JH45TPA2 |
| SJ5420US | Sensitron Semiconductors | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, D-5, MELF-2 | JAN1N5420US vs SJ5420US |
| SPD5420SMSTXV | Solid State Devices Inc (SSDI) | Check for Price | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETICALLY SEALED, SMS, 2 PIN | JAN1N5420US vs SPD5420SMSTXV |
| 1N5420E3 | Microsemi Corporation | Check for Price | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, B PACKAGE-2 | JAN1N5420US vs 1N5420E3 |
| 1N5420USE3 | Microsemi Corporation | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, MELF-2 | JAN1N5420US vs 1N5420USE3 |
| 1N5420BK | Central Semiconductor Corp | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, | JAN1N5420US vs 1N5420BK |
| 1N5190TIN/LEAD | Central Semiconductor Corp | Check for Price | Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETIC SEALED, CASE GPR-4AM, 2 PIN | JAN1N5420US vs 1N5190TIN/LEAD |
| SPD5420SMSTX | Solid State Devices Inc (SSDI) | Check for Price | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, HERMETICALLY SEALED, SMS, 2 PIN | JAN1N5420US vs SPD5420SMSTX |
JAN1N5420US Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JAN1N5420US is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
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To ensure proper biasing, connect the anode to a positive voltage source and the cathode to a negative voltage source or ground, while maintaining a voltage difference between the anode and cathode within the recommended operating range.
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The JAN1N5420US has a maximum surge current rating of 30A for 1ms, making it suitable for applications that require high surge current capability.
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Yes, the JAN1N5420US is suitable for high-frequency applications up to 1GHz due to its low capacitance and inductance, making it an ideal choice for RF and microwave circuits.
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To prevent electrostatic discharge (ESD) damage, handle the JAN1N5420US with ESD-protective equipment, such as wrist straps and mats, and ensure that the device is properly grounded during assembly and testing.