Part Details for IXYH24N90C3 by Littelfuse Inc
Results Overview of IXYH24N90C3 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXYH24N90C3 Information
IXYH24N90C3 by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXYH24N90C3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH2036
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Newark | Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXYH24N90C3 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$2.9700 / $3.2000 | Buy Now |
Part Details for IXYH24N90C3
IXYH24N90C3 CAD Models
IXYH24N90C3 Part Data Attributes
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IXYH24N90C3
Littelfuse Inc
Buy Now
Datasheet
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IXYH24N90C3
Littelfuse Inc
Insulated Gate Bipolar Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 46 A | |
Collector-Emitter Voltage-Max | 900 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 240 W | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 215 ns | |
Turn-on Time-Nom (ton) | 60 ns | |
VCEsat-Max | 3 V |