Part Details for IXXH50N60B3D1 by Littelfuse Inc
Results Overview of IXXH50N60B3D1 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IXXH50N60B3D1 Information
IXXH50N60B3D1 by Littelfuse Inc is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXXH50N60B3D1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1962
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Newark | Disc Igbt Xpt-Genx3 To-247Ad/ Tube |Littelfuse IXXH50N60B3D1 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$8.1800 / $8.8100 | Buy Now |
Part Details for IXXH50N60B3D1
IXXH50N60B3D1 CAD Models
IXXH50N60B3D1 Part Data Attributes
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IXXH50N60B3D1
Littelfuse Inc
Buy Now
Datasheet
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IXXH50N60B3D1
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | TO-247, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 120 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 600 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 320 ns | |
| Turn-on Time-Nom (ton) | 75 ns | |
| VCEsat-Max | 1.8 V |
Alternate Parts for IXXH50N60B3D1
This table gives cross-reference parts and alternative options found for IXXH50N60B3D1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXXH50N60B3D1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXXH50N60B3 | Littelfuse Inc | $8.4151 | Insulated Gate Bipolar Transistor, | IXXH50N60B3D1 vs IXXH50N60B3 |
IXXH50N60B3D1 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXXH50N60B3D1 is a TO-247-3L package with a minimum pad size of 4.5mm x 3.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, the IXXH50N60B3D1 is a high-reliability device that meets the requirements of AEC-Q101, making it suitable for use in automotive and other high-reliability applications.
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To ensure proper cooling, the IXXH50N60B3D1 should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the device should be operated within its recommended junction temperature range of -40°C to 150°C.
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The IXXH50N60B3D1 has a maximum surge current rating of 120A for 10ms, making it suitable for use in applications with high inrush currents.
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Yes, the IXXH50N60B3D1 can be used in a parallel configuration to increase current handling, but it is recommended to use a current sharing scheme to ensure equal current distribution between devices.