Part Details for IXTT30N60L2 by Littelfuse Inc
Results Overview of IXTT30N60L2 by Littelfuse Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTT30N60L2 Information
IXTT30N60L2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTT30N60L2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1835
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Newark | Disc Mosfet N-Ch Linear L2 To-268Aa/ Tube |Littelfuse IXTT30N60L2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$12.7800 / $13.7500 | Buy Now |
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DISTI #
IXTT30N60L2-ND
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DigiKey | MOSFET N-CH 600V 30A TO268 Min Qty: 1 Lead time: 46 Weeks Container: Tube |
1970 In Stock |
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$12.1905 / $20.1200 | Buy Now |
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DISTI #
V36:1790_15876605
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Arrow Electronics | Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Lead time: 46 Weeks Date Code: 2409 | Americas - 304 |
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$11.9200 / $19.5400 | Buy Now |
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DISTI #
86219737
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Verical | Trans MOSFET N-CH 600V 30A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Date Code: 2409 | Americas - 304 |
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$11.9200 / $19.5400 | Buy Now |
Part Details for IXTT30N60L2
IXTT30N60L2 CAD Models
IXTT30N60L2 Part Data Attributes
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IXTT30N60L2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTT30N60L2
Littelfuse Inc
Power Field-Effect Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.24 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 130 pF | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 540 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTT30N60L2
This table gives cross-reference parts and alternative options found for IXTT30N60L2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT30N60L2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| APT33H60S | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK, 3 PIN | IXTT30N60L2 vs APT33H60S |
| IXFV30N60PS | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXTT30N60L2 vs IXFV30N60PS |
| IXFT30N60Q | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXTT30N60L2 vs IXFT30N60Q |
| IXFT30N60Q | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 30A I(D), 600V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXTT30N60L2 vs IXFT30N60Q |
| IXTT30N60P | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXTT30N60L2 vs IXTT30N60P |
| IXTV30N60PS | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 30A I(D), 600V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN | IXTT30N60L2 vs IXTV30N60PS |
IXTT30N60L2 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXTT30N60L2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, IXTT30N60L2 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
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To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and staying within the device's recommended operating temperature range.
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Yes, you can parallel multiple IXTT30N60L2 devices to increase current handling, but it's essential to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.
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The recommended gate drive voltage for IXTT30N60L2 is between 10V and 15V, with a minimum gate drive current of 1A to ensure reliable switching.