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Part Details for IXTT20P50P by Littelfuse Inc
Results Overview of IXTT20P50P by Littelfuse Inc
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IXTT20P50P Information
IXTT20P50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTT20P50P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1829
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Newark | Mosfet, P-Ch, 500V, 20A, To-268, Channel Type:P Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXTT20P50P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 259 |
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$8.5500 / $11.4200 | Buy Now |
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DISTI #
IXTT20P50P-ND
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DigiKey | MOSFET P-CH 500V 20A TO268 Min Qty: 1 Lead time: 61 Weeks Container: Tube |
201 In Stock |
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$8.7220 / $15.5200 | Buy Now |
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DISTI #
E02:0323_07043621
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Arrow Electronics | Trans MOSFET P-CH 500V 20A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Lead time: 61 Weeks Date Code: 2514 | Europe - 300 |
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$8.8518 / $12.7686 | Buy Now |
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DISTI #
88156633
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Verical | Trans MOSFET P-CH 500V 20A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Date Code: 2514 | Americas - 300 |
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$10.1230 | Buy Now |
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LCSC | 500V 20A 460W 2V TO-268AA MOSFETs ROHS | 3 |
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$12.8103 / $13.2358 | Buy Now |
Part Details for IXTT20P50P
IXTT20P50P CAD Models
IXTT20P50P Part Data Attributes
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IXTT20P50P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTT20P50P
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 460 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTT20P50P
This table gives cross-reference parts and alternative options found for IXTT20P50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTT20P50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTH20P50P | IXYS Corporation | $6.8560 | Power Field-Effect Transistor, 20A I(D), 500V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | IXTT20P50P vs IXTH20P50P |
| IXTH20P50P | Littelfuse Inc | $8.0750 | Power Field-Effect Transistor, | IXTT20P50P vs IXTH20P50P |
IXTT20P50P Frequently Asked Questions (FAQ)
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The recommended PCB footprint for IXTT20P50P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
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While IXTT20P50P is a high-power thyristor, it's not recommended for high-frequency switching applications above 1 kHz. The device is optimized for high-voltage and high-current applications, but its switching speed is limited. For high-frequency applications, consider using a thyristor specifically designed for high-frequency switching, such as the Littelfuse SIDACtor series.
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To ensure reliable operation of IXTT20P50P in a high-temperature environment, it's essential to provide adequate heat sinking and thermal management. The device has a maximum junction temperature of 150°C, so ensure that the PCB design and thermal interface materials can keep the junction temperature below this limit. Additionally, consider derating the device's current and voltage ratings according to the ambient temperature.
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Yes, IXTT20P50P can be used in a parallel configuration to increase current handling, but it's crucial to ensure that the devices are properly matched and synchronized to prevent uneven current sharing. Additionally, the PCB design should be optimized to minimize inductance and resistance between the devices. It's recommended to consult with a Littelfuse application engineer or a qualified design expert to ensure a reliable parallel configuration.
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The recommended gate drive circuit for IXTT20P50P depends on the specific application requirements, but a general-purpose gate drive circuit can be designed using a gate driver IC, such as the Littelfuse SG3525, and a few external components. The gate drive circuit should provide a minimum gate current of 100 mA and a gate voltage of 10-15V to ensure reliable triggering of the thyristor.