Datasheets
IXTT11P50 by:

Power Field-Effect Transistor,

Part Details for IXTT11P50 by Littelfuse Inc

Results Overview of IXTT11P50 by Littelfuse Inc

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IXTT11P50 Information

IXTT11P50 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTT11P50

Part # Distributor Description Stock Price Buy
DISTI # 03AH1809
Newark Disc Mosfet P Channel-Std To-268Aa/ Tube |Littelfuse IXTT11P50 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $7.9200
  • 500 $7.3600
$7.3600 / $7.9200 Buy Now
DISTI # IXTT11P50-ND
DigiKey MOSFET P-CH 500V 11A TO268 Min Qty: 1 Lead time: 46 Weeks Container: Tube 336
In Stock
  • 1 $13.8200
  • 30 $8.4037
  • 120 $7.2180
  • 510 $7.0165
$7.0165 / $13.8200 Buy Now
DISTI # V36:1790_15876542
Arrow Electronics Trans MOSFET P-CH Si 500V 11A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Lead time: 46 Weeks Date Code: 2425 Americas - 360
  • 1 $13.6330
  • 10 $13.5000
  • 25 $8.2050
  • 100 $7.1330
  • 500 $6.9060
  • 1,000 $6.8520
$6.8520 / $13.6330 Buy Now
DISTI # 82736216
Verical Trans MOSFET P-CH Si 500V 11A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Date Code: 2425 Americas - 360
  • 1 $13.6330
  • 10 $13.5000
  • 25 $8.2050
  • 100 $7.1330
  • 500 $6.9060
  • 1,000 $6.8520
$6.8520 / $13.6330 Buy Now

Part Details for IXTT11P50

IXTT11P50 CAD Models

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IXTT11P50 Part Data Attributes

IXTT11P50 Littelfuse Inc
Buy Now Datasheet
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IXTT11P50 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 187 pF
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 44 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Element Material SILICON

IXTT11P50 Related Parts

IXTT11P50 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the IXTT11P50 is a rectangular pad with dimensions of 2.5mm x 1.5mm, with a 0.5mm radius corner and a 0.3mm spacing between pads.

  • Yes, the IXTT11P50 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure that the device is properly derated to prevent thermal runaway.

  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a soldering flux to the pads. The recommended soldering time is 2-3 seconds per pad.

  • The IXTT11P50 has a maximum surge current rating of 100A for 10/1000μs, making it suitable for applications that require high surge current protection.

  • Yes, the IXTT11P50 can be used in parallel to increase the current rating, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance.

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