Part Details for IXTT11P50 by Littelfuse Inc
Results Overview of IXTT11P50 by Littelfuse Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IXTT11P50 Information
IXTT11P50 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTT11P50
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1809
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Newark | Disc Mosfet P Channel-Std To-268Aa/ Tube |Littelfuse IXTT11P50 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.3600 / $7.9200 | Buy Now |
DISTI #
IXTT11P50-ND
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DigiKey | MOSFET P-CH 500V 11A TO268 Min Qty: 1 Lead time: 46 Weeks Container: Tube |
336 In Stock |
|
$7.0165 / $13.8200 | Buy Now |
DISTI #
V36:1790_15876542
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Arrow Electronics | Trans MOSFET P-CH Si 500V 11A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Lead time: 46 Weeks Date Code: 2425 | Americas - 360 |
|
$6.8520 / $13.6330 | Buy Now |
DISTI #
82736216
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Verical | Trans MOSFET P-CH Si 500V 11A 3-Pin(2+Tab) TO-268 Min Qty: 1 Package Multiple: 1 Date Code: 2425 | Americas - 360 |
|
$6.8520 / $13.6330 | Buy Now |
Part Details for IXTT11P50
IXTT11P50 CAD Models
IXTT11P50 Part Data Attributes
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IXTT11P50
Littelfuse Inc
Buy Now
Datasheet
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IXTT11P50
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.75 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 187 pF | |
JEDEC-95 Code | TO-268AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Element Material | SILICON |
IXTT11P50 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the IXTT11P50 is a rectangular pad with dimensions of 2.5mm x 1.5mm, with a 0.5mm radius corner and a 0.3mm spacing between pads.
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Yes, the IXTT11P50 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure that the device is properly derated to prevent thermal runaway.
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To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a soldering flux to the pads. The recommended soldering time is 2-3 seconds per pad.
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The IXTT11P50 has a maximum surge current rating of 100A for 10/1000μs, making it suitable for applications that require high surge current protection.
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Yes, the IXTT11P50 can be used in parallel to increase the current rating, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance.