Part Details for IXTT11P50 by IXYS Corporation
Results Overview of IXTT11P50 by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTT11P50 Information
IXTT11P50 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTT11P50
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
747-IXTT11P50
|
Mouser Electronics | MOSFETs 11 Amps 500V 0.75 Rds RoHS: Compliant | 0 |
|
$7.2200 / $13.8000 | Order Now |
|
DISTI #
IXTT11P50
|
TTI | MOSFETs 11 Amps 500V 0.75 Rds Min Qty: 30 Package Multiple: 30 Container: Tube |
Americas - 150 In Stock |
|
$9.3600 / $9.7300 | Buy Now |
|
DISTI #
IXTT11P50
|
IBS Electronics | IXTT11P50 by IXYS Semiconductor is a single P-channel MOSFET with 500V, 750mOhm Rds(on), 300W power dissipation, and housed in a TO-268 package, ideal for high-power applications. Min Qty: 300 Package Multiple: 1 | 0 |
|
$9.9450 / $10.4390 | Buy Now |
Part Details for IXTT11P50
IXTT11P50 CAD Models
IXTT11P50 Part Data Attributes
|
|
IXTT11P50
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTT11P50
IXYS Corporation
Power Field-Effect Transistor, 11A I(D), 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-268AA | |
| Package Description | TO-268, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-268AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IXTT11P50 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IXTT11P50 is -40°C to 150°C.
-
To ensure proper cooling, the IXTT11P50 should be mounted on a heat sink with a thermal resistance of 1°C/W or less, and the heat sink should be designed to provide adequate airflow.
-
The recommended gate drive voltage for the IXTT11P50 is 15V, but it can operate with a gate drive voltage as low as 10V.
-
Yes, the IXTT11P50 can be used in a parallel configuration, but it is recommended to use a current sharing scheme to ensure equal current distribution among the devices.
-
The maximum allowable voltage transient for the IXTT11P50 is 120% of the maximum rated voltage, but it is recommended to limit voltage transients to 10% of the maximum rated voltage to ensure reliable operation.