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Part Details for IXTQ60N20L2 by Littelfuse Inc
Results Overview of IXTQ60N20L2 by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXTQ60N20L2 Information
IXTQ60N20L2 by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXTQ60N20L2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH1771
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Newark | Disc Mosfet N-Ch Linear L2 To-3P (3)/ Tube |Littelfuse IXTQ60N20L2 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$11.5100 / $12.3900 | Buy Now |
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DISTI #
69705957
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Verical | Trans MOSFET N-CH 200V 60A 3-Pin(3+Tab) TO-3P Min Qty: 5 Package Multiple: 1 Date Code: 2301 | Americas - 20 |
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$19.1688 | Buy Now |
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|
Quest Components | 16 |
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$22.5150 / $23.7000 | Buy Now |
Part Details for IXTQ60N20L2
IXTQ60N20L2 CAD Models
IXTQ60N20L2 Part Data Attributes
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IXTQ60N20L2
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTQ60N20L2
Littelfuse Inc
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 255 pF | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 540 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTQ60N20L2
This table gives cross-reference parts and alternative options found for IXTQ60N20L2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ60N20L2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTA60N20T | IXYS Corporation | $2.4993 | Power Field-Effect Transistor, 60A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA, PLASTIC PACKAGE-3 | IXTQ60N20L2 vs IXTA60N20T |
| IXTP60N20T | IXYS Corporation | $2.8980 | Power Field-Effect Transistor, 60A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IXTQ60N20L2 vs IXTP60N20T |
| IXTP60N20T | Littelfuse Inc | $3.0338 | Power Field-Effect Transistor, | IXTQ60N20L2 vs IXTP60N20T |
| IXTQ60N20T | Littelfuse Inc | $3.8640 | Power Field-Effect Transistor, | IXTQ60N20L2 vs IXTQ60N20T |
| IXTA60N20T | Littelfuse Inc | $4.3736 | Power Field-Effect Transistor, | IXTQ60N20L2 vs IXTA60N20T |
| IXTQ60N20L2 | IXYS Corporation | $8.2793 | Power Field-Effect Transistor, 60A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXTQ60N20L2 vs IXTQ60N20L2 |
| IRHNA53260 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 55A I(D), 200V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | IXTQ60N20L2 vs IRHNA53260 |
| SHD239603 | Sensitron Semiconductors | Check for Price | Power Field-Effect Transistor, 50A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SHD-6, 3 PIN | IXTQ60N20L2 vs SHD239603 |
| IXFH58N20S | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | IXTQ60N20L2 vs IXFH58N20S |
| IRHNA53260PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 55A I(D), 200V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN | IXTQ60N20L2 vs IRHNA53260PBF |